Raman and infrared spectroscopic studies of GeGaAg sulphide glasses

Julien, C.; Barnier, S.; Massot, M.; Chbani, Noura; Cai, Xiu-qin; Loireau-Lozac'h, A.M.; Guittard, M.

doi:10.1016/0921-5107(94)90243-7

Cited by 94 publications

(61 citation statements)

References 36 publications

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“…In the spectrum, medium-intensity vibrational bands at ∼106, ∼127, ∼152, and ∼172 cm -1 and weak-intensity bands at ∼197 and ∼240 cm -1 are located in the frequency region consistent with translational, rotational, and bond-bending E and lower frequency F 2 modes. [14][15][16] The strongest bands with peak intensity values at ∼344, ∼352, and ∼363 cm -1 may be attributed to Ge-S-Ge stretching modes. Specifically, the bands at ∼344 and ∼352 cm -1 may be attributed to A 1 symmetric stretching due to weak IR activity.…”

Section: Resultsmentioning

confidence: 99%

Synthesis and Characterization of the Thiogermanic Acids H₄Ge₄S₁₀ and H₂Ge₄S₉

et al. 2003

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The synthesis and structure of the thiogermanic acids H4Ge4S10 and H2Ge4S9 are reported. A novel preparation method consisting of reacting germanium oxide with liquid hydrogen sulfide containing a trace amount of water is used to form Ge4S104-ions. Evaporating the hydrogen sulfide solution at room temperature leaves an unstable H4Ge4S10·xH2O product. The stoichiometry and structure of the thermally stable anhydrous phase are dependent on reaction time. An H4Ge4S10 product with an adamantane-like cage structure is obtained at shorter reaction times. Longer reaction times produce an H2Ge4S9 product with a more complex cage unit, a higher symmetry unit cell, and increased thermal stability. Raman, infrared, powder X-ray diffraction, and thermogravimetric data are reported for both structures.

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Section: Resultsmentioning

confidence: 99%

Synthesis and Characterization of the Thiogermanic Acids H₄Ge₄S₁₀ and H₂Ge₄S₉

et al. 2003

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“…The main absorption bands were actually observed to be overlapped in many known compounds containing both GaS 4 and GeS 4 structural units. 24,25 Hence, the dominant bands located at 372 and 330 cm -1 in the IR spectra of AgGaGeS 4 and Li 2 Ga 2 GeS 6 can be assigned to the overlapped asymmetric (ν as ) and symmetric (ν s ) stretching of Ge-S-Ge and Ga-S-Ga modes, respectively. There are no additional absorption bands observed in the mid-IR region in both cases, which suggests that the transparent range in the mid-IR of Li 2 Ga 2 GeS 6 can be similar to that of AgGaGeS 4 .…”

Section: Resultsmentioning

confidence: 99%

Characterization of New Infrared Nonlinear Optical Material with High Laser Damage Threshold, Li₂Ga₂GeS₆

et al. 2008

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A new thio-germanium sulfide Li2Ga2GeS6 has been synthesized for the first time and its structure was found to be isomorphous with AgGaGeS4, which is well-known as a promising infrared NLO material. The host structure is built of GaS4 tetrahedra linked by corners to GeS4 tetrahedra to create a 3D framework forming tunnels along the c-axis, in which the Li+ions are located. The second harmonic generation (SHG) efficiency determined on powders of Li2Ga2GaS6 is 200 times larger than that of α-SiO2. Unlike AgGaS2 and AgGaGeS4, Li2Ga2GeS6 was observed to be very stable under prolonged Nd:YAG 1.064 μm laser pumping, indicative of a large improvement in laser damage threshold. This new material could supplant Ag phases in the next generation of high-power infrared NLO applications. Disciplines Atomic, Molecular and Optical Physics | Inorganic Chemistry | Materials Chemistry | Materials Science and Engineering CommentsReprinted with permission from Chemistry of Materials 20 (2008) ReceiVed March 12, 2008. ReVised Manuscript ReceiVed July 8, 2008 A new thio-germanium sulfide Li 2 Ga 2 GeS 6 has been synthesized for the first time and its structure was found to be isomorphous with AgGaGeS 4 , which is well-known as a promising infrared NLO material. The host structure is built of GaS 4 tetrahedra linked by corners to GeS 4 tetrahedra to create a 3D framework forming tunnels along the c-axis, in which the Li + ions are located. The second harmonic generation (SHG) efficiency determined on powders of Li 2 Ga 2 GaS 6 is ∼200 times larger than that of R-SiO 2 . Unlike AgGaS 2 and AgGaGeS 4 , Li 2 Ga 2 GeS 6 was observed to be very stable under prolonged Nd:YAG 1.064 µm laser pumping, indicative of a large improvement in laser damage threshold. This new material could supplant Ag phases in the next generation of high-power infrared NLO applications.

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“…These works also use several different methods such as Raman [12,[36][37][38][39], XAFS [40], neutron diffraction [41], EXAFS [42], XRD and Raman [43], 2D micro-Raman [44]. They have all found that Ge and Ga atoms are equally fourfold coordinated, [GaS 4 ] and [GeS 4 ] tetrahedral units are cross-linked via bridging sulfur atoms, M-chalcogen bonds are preferable.…”

Section: Introductionmentioning

confidence: 99%

Local motifs in GeS2–Ga2S3 glasses

Pethes

Nazabal

Chahal

et al. 2016

Journal of Alloys and Compounds

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The structure of (GeS 2 ) 0.75 (Ga 2 S 3 ) 0.25 and (GeS 2 ) 0.83 (Ga 2 S 3 ) 0.17 glasses was investigated by Raman scattering, high energy X-ray diffraction and extended X-ray absorption fine structure (EXAFS) measurements at the Ga and Ge K-edges. The reverse Monte Carlo simulation technique (RMC) was used to obtain structural models compatible with diffraction and EXAFS datasets. It was found that the coordination number of Ga is close to four. While Ge atoms have only S neighbors, Ga binds to S as well as to Ga atoms showing a violation of chemical ordering in GeS 2 -Ga 2 S 3 glasses. Analysis of the corner-and edge-sharing between [GeS 4/2 ] units revealed that about 30% of germanium atoms participate in the edge-shared tetrahedra.

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Raman and infrared spectroscopic studies of GeGaAg sulphide glasses

Cited by 94 publications

References 36 publications

Synthesis and Characterization of the Thiogermanic Acids H₄Ge₄S₁₀ and H₂Ge₄S₉

Synthesis and Characterization of the Thiogermanic Acids H₄Ge₄S₁₀ and H₂Ge₄S₉

Characterization of New Infrared Nonlinear Optical Material with High Laser Damage Threshold, Li₂Ga₂GeS₆

Local motifs in GeS2–Ga2S3 glasses

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Raman and infrared spectroscopic studies of GeGaAg sulphide glasses

Cited by 94 publications

References 36 publications

Synthesis and Characterization of the Thiogermanic Acids H4Ge4S10 and H2Ge4S9

Synthesis and Characterization of the Thiogermanic Acids H4Ge4S10 and H2Ge4S9

Characterization of New Infrared Nonlinear Optical Material with High Laser Damage Threshold, Li2Ga2GeS6

Local motifs in GeS2–Ga2S3 glasses

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Synthesis and Characterization of the Thiogermanic Acids H₄Ge₄S₁₀ and H₂Ge₄S₉

Synthesis and Characterization of the Thiogermanic Acids H₄Ge₄S₁₀ and H₂Ge₄S₉

Characterization of New Infrared Nonlinear Optical Material with High Laser Damage Threshold, Li₂Ga₂GeS₆