Local motifs in GeS2–Ga2S3 glasses

Pethes, Ildikó; Nazabal, Virginie; Chahal, Radwan; Bureau, Bruno; Kaban, I.; Belin, Stéphanie; Jóvári, P.

doi:10.1016/j.jallcom.2016.02.193

Cited by 28 publications

(15 citation statements)

References 60 publications

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“…The first peak of the Ge-S and Ga-S PPCFs are around 2.22 Å and 2.27-2.28 Å, respectively. These values agree well with that obtained earlier in ternary Ge-Ga-S glasses by XAFS spectroscopy [48] (2.22 Å and 2.28 Å) and by RMC method with EXAFS and XRD measurements [43].…”

Section: Reverse Monte Carlo Simulationssupporting

confidence: 92%

“…The data analyzed in the present study allows the presence of long Ge-S bonds as well. However, as they were not found in Ge-Ga-S glasses [43] the presence of longer Ge-S type bonds is probably due to the 'cross talk' between Ge-S and Sb-S correlations. Further studies are under way to reveal where and why these long bonds appear in Sb 2 S 3 based glasses.…”

Section: Resultsmentioning

confidence: 62%

“…Ref. [43].) The ratio of Ge atoms participating in ES units is around 40% in the investigated glasses;…”

Section: Resultsmentioning

confidence: 92%

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The structure of near stoichiometric Ge-Ga-Sb-S glasses: A reverse Monte Carlo study

Pethes

Nazabal

Chahal

et al. 2019

Journal of Non-Crystalline Solids

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The structure of Ge 22 Ga 3 Sb 10 S 65 and Ge 15 Ga 10 Sb 10 S 65 glasses was investigated by neutron diffraction (ND), X-ray diffraction (XRD), and extended X-ray absorption fine structure (EXAFS) measurements at the Ge, Ga and Sb K-edges. Experimental data sets were fitted simultaneously in the framework of the reverse Monte Carlo (RMC) simulation technique. Short range order parameters were determined from the obtained large-scale configurations. It was found that the coordination numbers of Ge, Sb and S are around the values predicted by the Mott-rule (4, 3 and 2, respectively). The Ga atoms have on average 4 nearest neighbors. The structure of these stoichiometric glasses can be described by the chemically ordered network model: Ge-S, Ga-S and Sb-S bonds are the most important. Long Sb-S distances (0.3 -0.4 Å higher than the usual covalent bond lengths) are observed, suggesting that Sb atoms can be found in various local environments. 15-16 groups of the periodic table, the total coordination number of the elements (N i ) follows the Mottrule [36]: It is equal to 8-N, where N is the number of electrons in the valence shell of the ith element (e. g. Ge-As-Se [37], Ge-As-Te [38], Ge-Sb-Se [39], Ge-Sb-Te [40]). However glasses containing group 13 elements can deviate from this rule, and the total coordination number of Ga or In can be four instead of three [41 -44]. The structure of several chalcogenide glasses can be described in the framework of the chemically ordered network model (CONM) [45, 46]. This model predicts that M-Ch bonds are preferable, where M denotes the elements from groups 13, 14 or 15, and Ch means the chalcogen element. The structure of the stoichiometric glass can be built from tetrahedral and/or pyramidal units such as [GeCh 4/2 ] or [SbCh 3/2 ]. The M-M and Ch-Ch bonds are present only in non-stoichiometric glasses: M-M bonds in Ch-deficit (Ch-under stoichiometric) compositions and Ch-Ch bonds in Ch-rich (Ch-over stoichiometric) glasses.preparing Ge 22 Ga 3 Sb 10 S 65 and Ge 15 Ga 10 Sb 10 S 65 , i.e. 5N for germanium, gallium, antimony or sulphur.Commercial sulphur was further purified by successive distillations to remove carbon (CO 2 , CS 2 , COS) and hydrates or sulphide hydride (H 2 O, OH, SH) impurities. Then, the required amounts of chemical reagents were put in silica ampoules and pumped under vacuum (10 -4 mbar) for a few hours. The tubes were then sealed and heated at 850°C for 12h in a rocking furnace to ensure the homogenization of the melt. After water quenching, the glass rods were annealed near their glass transition temperatures for 6h. The densities of the samples were determined using a Mettler Toledo XS64 system measuring the weights of the samples in air and water. The density values are shown in Table 1.Neutron diffraction experiments were carried out at the 7C2 diffractometer of LLB (Saclay, France).

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Section: Reverse Monte Carlo Simulationssupporting

confidence: 92%

Section: Resultsmentioning

confidence: 62%

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The structure of near stoichiometric Ge-Ga-Sb-S glasses: A reverse Monte Carlo study

Pethes

Nazabal

Chahal

et al. 2019

Journal of Non-Crystalline Solids

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“…23 In contrast, crystalline gallium sulfides and gallium in bulk Ga2S3-GeS2 sulfide glasses exhibit tetrahedral Ga environment. 13,14,[27][28][29][30] Often, the chemical composition of gallium sulfide thin films depends on deposition technique and technical details, 25 leaving room for uncertainty in the relationships between nominal composition, suggested structure and observed properties.…”

Section: Introductionmentioning

confidence: 99%

Glassy GaS: transparent and unusually rigid thin films for visible to mid-IR memory applications

Tverjanovich

Khomenko

Bereznev

et al. 2020

Phys. Chem. Chem. Phys.

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“…The incorporation of Ga provides a compensation for the negative charge of free S 2− ions by forming the chemical bonds with RE ions. The expecting compositions, including Ga–La–S17, Ga–As–S18, Ga–Na–S19, and Ga–Ge–S glasses20 et al . have been developed as host materials for RE dopants because a large amount of RE ions could be dissolved and dispersed in low phonon energy hosts homogeneously, making the doped glasses be promising for IR amplifiers or lasers.…”

mentioning

confidence: 99%

Effect of gallium environment on infrared emission in Er3+-doped gallium– antimony– sulfur glasses

Jiao

et al. 2017

Sci Rep

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Gallium-based Ga–Sb–S sulfide glasses was elaborated and studied. A relationship between the structure, composition, and optical properties of the glass has been established. The effects of the introduction of Ga on the structure using infrared and Raman spectroscopies and on the Er3+-doped IR emission have been discussed. The results show that incorporation of Ga induced the dissociation of [SbS3] pyramids units and the formation of tetrahedral [GaS4] units. The dissolved rare earth ions are separated around the Ga–S bonding and the infrared emission quenching are controlled. Moreover, continuous introduction of Er ions into the glass forms more Er–S bonds through the further aggregation surrounding the [GaS4] units. In return, the infrared emission intensity decreased with excessive Er ion addition. This phenomenon is correlated with the recurrence concentration quenching effect induced by the increase of [GaS4] units.

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Local motifs in GeS2–Ga2S3 glasses

Cited by 28 publications

References 60 publications

The structure of near stoichiometric Ge-Ga-Sb-S glasses: A reverse Monte Carlo study

The structure of near stoichiometric Ge-Ga-Sb-S glasses: A reverse Monte Carlo study

Glassy GaS: transparent and unusually rigid thin films for visible to mid-IR memory applications

Effect of gallium environment on infrared emission in Er3+-doped gallium– antimony– sulfur glasses

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