Radio-Frequency Carrier and Capacitive Coupling Procedures for Resistivity and Lifetime Measurements on Silicon

Weingarten, I. R.; Rothberg, M.

doi:10.1149/1.2428035

Cited by 11 publications

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“…Enfin, il existe différentes méthodes de mesures « statiques » de conductivité d'échantillons semiconducteurs massiques [73], [74], [75], [76]. Ces méthodes diffèrent de celles utilisées pour les échantillons bons conducteurs : dans le cas de substances de haute résistivité, la liaison inductive est remplacée par une liaison capacitive.…”

Section: Mesure De La Décroissance Des Courants Deunclassified

Les méthodes de mesures de résistivités volumiques et superficielles en courant alternatif

Ehrburger-Dolle¹

1972

Rev. Phys. Appl. (Paris)

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Dans cette étude bibliographique, l'auteur s'est proposé d'examiner les différentes méthodes de mesure de résistivité en courant alternatif. On a ainsi passé en revue les mesures par courants de Foucault et les mesures en hyperfréquences. Les premières sont généralement utilisées pour étudier la résistivité volumique d'un échantillon et présentent l'avantage sur les mesures en courant continu de ne nécessiter aucun contact électrique ; au contraire, en hyperfréquence, seule la résistivité superficielle peut être obtenue

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Section: Mesure De La Décroissance Des Courants Deunclassified

Les méthodes de mesures de résistivités volumiques et superficielles en courant alternatif

Ehrburger-Dolle¹

1972

Rev. Phys. Appl. (Paris)

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“…Resistivity measurements with d.c. or low-frequency a.c. usually are not meaningful. Resistivity can be measured, however, by high-frequency techniques (4,5).…”

Section: Application To Polycrystalline Materialsmentioning

confidence: 99%

Use of Hall Measurements in Evaluating Polycrystalline Silicon

Olshefski

Shombert²,

Weingarten³

1961

J. Electrochem. Soc.

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Hall measurements at room temperature have been used to determine the average net carrier density in polycrystalline silicon. The method does not require cutting of samples and destruction of the rods. Current contacts are made to the ends of a rod with strips of metal foil; Hall contacts are made with two titanium blades which close on the rod. Hall measurements made this way on single-crystal zone-refined rods agree with measurements on samples cut from the rods in the conventional manner. The average carrier densities measured in the polycrystalline rods have been correlated with the resistivities of these same rods after one, two, three floating zone passes. Measurement of Whole IngotsThe conventional bridge-shaped samples used for Hall measurements require that an ingot be sawed up and thus partially destroyed. It would obviously be advantageous to make Hall measurements on an ingot of semiconductor material without cutting it up (1). This was done with the apparatus ~ shown in Fig. 1. The holder was made of Lucite and was clamped between the poles of a Varian 4-in. electromagnet. The sample (which was a round ingot) was placed in the V-shaped blocks of Lucite and rested on a knife-edge titanium blade which formed one Hall contact. A pivoted Lucite arm carrying the other titanium blade Hall contact was placed on top of the sample and was held down with a nonmagnetic (lead) weight. The pivoted arm could be moved laterally by an adjusting screw to align the top blade accurately above the lower blade; this adjustment eliminated the IR voltage between the Hall contacts, so that the measured Hall voltage was zero when the magnetic field was zero. Current contacts to the sample were made on the ends of the ingot either by ultrasonic soldering with indium, by

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Ein kapazitives Verfahren zur Leitf�higkeitsmessung an Halbleitern bei tiefen Temperaturen (2,3 K bis 300 K)

Hoyer

1975

Archiv f. Elektrotechnik

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ubersieht: Zur Leitf~ihigkeitsmessung an plf~ttchenf6rmigen Halbleiterproben bei tiefen Temperaturen wurde ein Wechselstromverfahren entwickelt, bei dem die Stromeinspeisung kapazitiv i~ber zylindrische Koppelelektroden (2 mm 2~ ) erfolgt. Zur Leitfiihigkeitsbestimmung dienen selbstabgleichende MeBoszillatoren, deren Frequenz sich mngekehrt proportional zum Probenwiderstand einstellt. Nit MeBfrequenzen yon 2 Hz bis 20o MHz k6nnen je nach Probenabmessungen spezifische Widerstiinde yon 5 f/cm bis lo 10 ~em erfaBt werden. Leitf~.higkeitsmessungen in Abh~tngigkeit yon der Temperatur, yore Ort nnd yon der elektrischen und magnetischen Feldst~irke wurden an Proben yon Ge, Si und GaAs durchgefiihrt und mit Gleichstromkontrollmessungen aa kontaktierten Proben verglichen, wobei sich zufriedenstelIende 13bereinstimmung ergab.Contents : For low temperature resistivity measurements of semiconductor wafers an ae-method has been developed that uses cylindrical electrodes of 2 mm diameter as capacitive contacts. The semiconductor resistivity is determined from the frequency of oscillator circuits, which adjust their frequency inversely proportional to the specimen resistance. The frequency range from 2 Hz to 200 MHz corresponds to a resistivity range from 5 f~cm to lo 1~ ~cm depending on the size of the specimen. Low temperature measurements 0I the resistivity, the 10cal resistivity distribution and the magnetoresistance and investigations of hot electron effects have been carried out between 2,3 K and 300 I~2 with several semiconductor crystals of Ge, Si and GaAs and have been compared with common dc-measurements on samples with ohmic contacts. The results are in satisfactory agreement.

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Radio-Frequency Carrier and Capacitive Coupling Procedures for Resistivity and Lifetime Measurements on Silicon

Cited by 11 publications

References 0 publications

Les méthodes de mesures de résistivités volumiques et superficielles en courant alternatif

Les méthodes de mesures de résistivités volumiques et superficielles en courant alternatif

Use of Hall Measurements in Evaluating Polycrystalline Silicon

Ein kapazitives Verfahren zur Leitf�higkeitsmessung an Halbleitern bei tiefen Temperaturen (2,3 K bis 300 K)

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