By use of a radio‐frequency carrier and capacitive coupling it has been possible to measure the resistance and lifetime of silicon rods without making direct ohmic contact to the samples. Even with contacts, the use of an RF carrier to observe lifetime by photoconduction decay eliminates the need for insuring solid ohmic contacts as is required with a d‐c carrier. With low loss insulation between coupling capacitors and sample, an RF bridge will measure separately both the sample resistance between the coupling capacitors and the value of this coupling capacitance.