Radiative recombination in Cu2ZnSnSe4 monograins studied by photoluminescence spectroscopy

Grossberg, Michael; Krustok, J.; Timmo, K.

doi:10.1016/j.tsf.2008.11.024

Cited by 158 publications

(131 citation statements)

References 14 publications

Supporting

Mentioning

115

Contrasting

Order By: Relevance

“…1(d), the modes at 169, 173 cm -1 , 196.6 and 234 cm -1 , as reported earlier [6] and assigned to CZTSe, can be seen. The Cu x Se mode at 261 cm -1 can also be found at a few small spots randomly distributed across the surface.…”

supporting

confidence: 77%

“…However, the usefulness of such methods depends critically on the availability of high quality material, with sharp and resolved features in the optical spectra. Despite the high record efficiency the structural quality currently achieved in Cu 2 ZnSn(S,Se) 4 is rather low: in the majority of publications the photoluminescence (PL) spectra reveal only one broad, low intensity band ascribed to radiative recombination of free electrons and holes localised at shallow acceptors [6]. The width of this band and its asymmetric shape suggest the influence of band tails induced by randomly distributed high concentrations of charged defects.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Optical properties of high quality Cu2ZnSnSe4 thin films

Luckert

Hamilton

Yakushev

et al. 2011

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra

show abstract

supporting

confidence: 77%

mentioning

confidence: 99%

Optical properties of high quality Cu2ZnSnSe4 thin films

Luckert

Hamilton

Yakushev

et al. 2011

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

show abstract

“…[9][10][11][12] The absorption coefficient is a > 10 4 cm À1 at photon energies >1.05 eV, and Urbach energy is E Ur % 170 meV. The calculated curve fits the measured spectrum well in the range <1.4 eV.…”

mentioning

confidence: 53%

“…So far, experimental results are reported only for the first absorption edge around 1 eV. [9][10][11][12] In this manuscript, we report on our findings on the absorption behavior of CZTSe absorber films above this photon energy and present experimental results which confirm the existence of a lone conduction band.…”

mentioning

confidence: 60%

“…The measured spectra with a PL peak at %0.95 eV and the main Raman shift at %195 cm À1 fit the acknowledged kesterite fingerprints in literature, respectively. 10,11,15 The absorption behavior of the samples is determined by optical transmission measurements which were performed in an UV-VIS spectrometer with an Ulbricht sphere. The recorded optical transmission data were evaluated by an optical modeling tool kit in the program Diplot.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Lone conduction band in Cu2ZnSnSe4

Gütay

Redinger

Djemour

et al. 2012

Applied Physics Letters

View full text Add to dashboard Cite

Band gap control via tuning of inversion degree in CdIn2S4 spinel Appl. Phys. Lett. 100, 102112 (2012) Direct imaging and optical activities of stacking faults in 4H-SiC homoepitaxial films J. Appl. Phys. 111, 053513 (2012) Steady state and transient electron transport properties of bulk dilute GaNxAs1−x J. Appl. Phys. 111, 053703 (2012) Efficient algorithm of the transcorrelated method for periodic systems J. Chem. Phys. 136, 094108 (2012) Valence band structure in boron-zinc oxide films characterized by secondary electron emission

show abstract

Growth of CZTS‐Based Monograins and Their Application to Membrane Solar Cells

Mellikov

Altosaar

Kauk-Kuusik

et al. 2014

Copper Zinc Tin Sulfide‐Based Thin‐Film Solar Cells

View full text Add to dashboard Cite

The idea of producing solar cells from powder materials is nearly as old as the history of modern silicon-based solar cells. Just three years after AT&T Bell Lab's Chapin, Fuller, and Pearson released their first commercially attractive silicon solar cell [1], Hoffman's Electronics patented a method to produce solar modules from silicon powders [2]. Based on Hoffman's Electronics' patents, Ties Siebold te Velde of Philips Company in Eindhoven filed the first patent on monograin membrane devices for radiation detection, use in a solar battery, a LED, etc. [3]. Eighteen further patents had been filed by 1973, specifying methods of membrane production as well as new applications such as the production of printed circuits. Philips continued to produce monograin membrane-based photoconductive elements containing 35-45 μm Cu-doped CdS particles in Hamburg until the mid-1990s. Meanwhile, in the mid-1970s the technology to produce silicon spheres and insert these into an aluminum foil with appropriately placed holes had been developed at Texas Instruments in order to electrolyze a solution to store light energy as chemical energy in electrolysis products [4].

show abstract

Radiative recombination in Cu2ZnSnSe4 monograins studied by photoluminescence spectroscopy

Cited by 158 publications

References 14 publications

Optical properties of high quality Cu2ZnSnSe4 thin films

Optical properties of high quality Cu2ZnSnSe4 thin films

Lone conduction band in Cu2ZnSnSe4

Growth of CZTS‐Based Monograins and Their Application to Membrane Solar Cells

Contact Info

Product

Resources

About