RADIATIVE PAIR RECOMBINATION AND SURFACE RECOMBINATION IN GaP PHOTOLUMINESCENCE

Gershenzon, M.; Mikulyak, R. M.

doi:10.1063/1.1754421

Cited by 71 publications

(31 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Large surface recombination velocities ͑Ͼ2 ϫ 10 6 cm s −1 ͒ were previously noted for GaP͑111͒A crystals after etching in HCl͑aq͒. 29 Analogous measurements of GaP͑111͒B surfaces have not yet been reported and were not possible with the materials employed here ͑vide supra͒.…”

Section: Discussionmentioning

confidence: 82%

Physicochemical and Electrochemical Properties of Etched GaP(111)A and GaP(111)B Surfaces

Mukherjee¹,

Erickson

Maldonado³

2010

J. Electrochem. Soc.

View full text Add to dashboard Cite

The observable chemical, electrochemical, and morphological features of GaP͑111͒ surfaces after wet chemical etching have been assessed using X-ray photoelectron spectroscopy, atomic force microscopy, and electrochemical impedance spectroscopy. HF͑aq͒, NH 4 F͑aq͒, H 2 SO 4 ͑aq͒, HCl͑aq͒, HCl-HNO 3 ͑aq͒, and dilute Br 2 in CH 3 OH ͑with and without a follow-up alkaline etch͒ are all potent etchants for GaP͑111͒ but yield distinctly different GaP͑111͒A and GaP͑111͒B surface conditions. Freshly etched GaP͑111͒B interfaces show higher residual oxide coverages and are generally rougher than similarly treated GaP͑111͒A surfaces. Differential capacitance measurements of n-GaP͑111͒A and n-GaP͑111͒B electrodes show that various etchants result in a wide range of apparent values for the conduction bandedge potentials, spanning approximately 700 mV in acetonitrile. These data show that these etched surfaces are not equivalent and that the observable physicochemical and electrochemical properties of GaP͑111͒ are strongly influenced by the choice of wet chemical etchant. Additionally, X-ray photoelectron spectra show that adsorption of ͑4-fluorophenyl͒methanethiol onto GaP͑111͒ is insensitive to surface orientation or etching method, indicating no dominant covalent interaction between organic thiols and GaP͑111͒ interfaces.

show abstract

Section: Discussionmentioning

confidence: 82%

Physicochemical and Electrochemical Properties of Etched GaP(111)A and GaP(111)B Surfaces

Mukherjee¹,

Erickson

Maldonado³

2010

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…[1][2][3] In this work the energy of the photons in the laser beam was greater than the width of the band gap of the crystal, and consequently the electrons and holes created by the excitation were mainly due to the one-photon absorption process. In the present note we report the result of an investigation into the change in conductivity due to two-photon excitation.…”

mentioning

confidence: 99%

Calculations of Two-Photon Conductivity in Semiconductors

Yee

1969

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…First, it is known that luminescence from either donor-acceptor pairs 19 or excitons bound to isoelectronic traps 20 in GaP can have near unit quantum efficiency at low temperatures and low doping levels. This is possible since the Auger process proposed here cannot occur for either of these luminescence mechanisms.…”

mentioning

confidence: 99%