Auger Recombination of Excitons Bound to Neutral Donors in Gallium Phosphide and Silicon

Nelson, D. F.; Cuthbert, J. D.; Dean, P. J.; Thomas, D. G.

doi:10.1103/physrevlett.17.1262

Cited by 172 publications

(24 citation statements)

References 17 publications

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“…The first reports on very high efficiency of the Auger effect for neutral donor BE [7] and ABE [8] confirmed this expectation. It was shown that the decay time of P bound DBE is 500 times shorter than expected for radiative recombination only [7]. The effect was related to Auger-type nonradiative, recombination, based rather on indirect arguments.…”

Section: The Auger Mechanism Of Odmr Detectionsupporting

confidence: 67%

Optically Detected Magnetic Resonance Studies of Cd_1-xMn_xTe (x=0.095, 0.007)

et al. 1993

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The dominant mechanism responsible for the optical detection of the Mn2 + magnetic resonance in Cd 1 -x Mn x Te (x = 0.095, 0.007) is explained.By either change of the external magnetic freld or b y setting the conditions for the Mn2 + magnetic resonance, we could change the relative efficiencies of the two competing excitonic recombination processes. By lowering magnetization at the magnetic resonance, recombination via the acceptor bound exciton channel, which is mainly nonradiative, is enhanced. Then, a large up to 50% decrease in the total photoluminescence efficiency was observed in the optically detected magnetic resonance experiment. Such observation allows for verification of the large efficiency of the Auger-type transition responsible for the nonradiative decay of the acceptor bound exciton.

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Section: The Auger Mechanism Of Odmr Detectionsupporting

confidence: 67%

Optically Detected Magnetic Resonance Studies of Cd_1-xMn_xTe (x=0.095, 0.007)

et al. 1993

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“…There are only a few lifetimes of bound excitons in Si published up to now, namely for the donors As [3], P [4], Li 161, and the acceptor B [4]. In this paper we present measurements of high experimental accuracy on excitons bound to Li, P, As, B, Al, Ga, In.…”

Section: Introductionmentioning

confidence: 96%

Auger lifetimes for excitons bound to neutral donors and acceptors in Si

Schmid

1977

Physica Status Solidi (b)

130

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The lifetimes of excitons bound to the neutral donors Li, P, and As and neutral acceptors B, Al, Ga, and In in silicon are determined by time-resolved photoluminescence measurements a t 4.2 K and a strong dependence on the binding energy of the donor or acceptor is found. This dependence can be understood assuming a localized phononless Auger-process to be the main recombination mechanism. A theoretical calculation using approximate wavefunctions is presented and leads to a very good agreement with the experimental results.Die Lebensdauern gebundener Exzitonen an den neutralen Donatoren Li, P und As sowie den Akzeptoren B, AI, Ga und In in Silizium werden bei 4,2 K mit zeibufgeloster Photolumineszenzspektroskopie gemessen. Es ergibt sich eine starke Abhiingigkeit von der Bindungsenergie der entsprechenden Stdrstelle. Man kann diese Abhangigkeit verstehen, wenn man einen lokalisierten, phononenfreien Auger-Prom6 ale wesentlichen Rekombinationsmechanismus annimmt. Eine theoretische Berechnung der Lebensdauer unter Verwendiing angeniiherter Wellenfunktionen ergibt eine sehr gute Ubereinstimmung mit den experimentellen Ergebnissen.

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“…So, in all probability, an interaction between free excitons and radiative centers accompanied by nonradiative exciton annihilation takes place, the released energy being transferred to the electrons on the centers [1,2]. A similar process, namely Auger recombination with the ejection of hot electron from shallow donor to c-band, was found to realize for DBE [21,22].…”

Section: Introductionmentioning

confidence: 98%

“…So, the ejection of electrons from these centers to c-band will result in the appearance of PC, whereas reverse electron capture by them will cause PL. At the same time, the capture of electron by ionized shallow donor is very fast nonradiative process [20,21], which should lead to the formation of the minimum in PLE and PC spectra at the wavelength corresponding to DBE position. Thus, one can conclude that nonradiative exciton annihilation plays an important role in the formation of PLE and PC spectra in ZnO.…”

Section: Introductionmentioning

confidence: 99%

Role of excitons in the excitation of deep‐level emission in ZnO crystals

Кушниренко

Маркевич

Borkovska

et al. 2010

Phys. Status Solidi (c)

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In undoped ZnO crystals, photoluminescence excitation (PLE) spectra of deep‐level green and orange PL bands as well as photocurrent (PC) spectra were measured at 77 and 290 K. Some PLE and PC peaks whose energy positions coincided with that of free exciton and its excited states were observed, the intensity of PL and PC excited in these peaks being higher than under excitation by band‐to‐band light. At the same time, a sharp minimum was found in PLE and PC spectra at the position of donor‐bound exciton. Obtained results were accounted for by the interaction of excitons with lattice defects. A number of longer wavelength PLE and PC peaks whose energy positions coincided in fact with that of the first, second and third phonon replicas of free exciton were also observed. The origin of these peaks is discussed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Auger Recombination of Excitons Bound to Neutral Donors in Gallium Phosphide and Silicon

Cited by 172 publications

References 17 publications

Optically Detected Magnetic Resonance Studies of Cd_1-xMn_xTe (x=0.095, 0.007)

Optically Detected Magnetic Resonance Studies of Cd_1-xMn_xTe (x=0.095, 0.007)

Auger lifetimes for excitons bound to neutral donors and acceptors in Si

Role of excitons in the excitation of deep‐level emission in ZnO crystals

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Auger Recombination of Excitons Bound to Neutral Donors in Gallium Phosphide and Silicon

Cited by 172 publications

References 17 publications

Optically Detected Magnetic Resonance Studies of Cd1-xMnxTe (x=0.095, 0.007)

Optically Detected Magnetic Resonance Studies of Cd1-xMnxTe (x=0.095, 0.007)

Auger lifetimes for excitons bound to neutral donors and acceptors in Si

Role of excitons in the excitation of deep‐level emission in ZnO crystals

Contact Info

Product

Resources

About

Optically Detected Magnetic Resonance Studies of Cd_1-xMn_xTe (x=0.095, 0.007)

Optically Detected Magnetic Resonance Studies of Cd_1-xMn_xTe (x=0.095, 0.007)