Radiation Sensor Compatible With Standard CMOS Technology

Garcı́a-Moreno, E.; Picos, R.; Isern, E.; Roca, M.; Bota, S.; Suenaga, K.

doi:10.1109/tns.2008.2011804

Cited by 16 publications

(6 citation statements)

References 6 publications

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“…As a consequence, a portion of the charge stored in the capacitor is neutralized by the radiation-generated electrons, inducing a variation in the drain current of the transistor [8]. The signal conditioning circuit converts this current variation into a 5-V square wave signal whose frequency is a function of the current variation, allowing the measurement of the absorbed dose [6], [9], [10]. This signal can be driven on loads such as PCB paths or 10-m coaxial cable.…”

Section: Conceptmentioning

confidence: 99%

Investigation on Passive and Autonomous Mode Operation of Floating Gate Dosimeters

Brucoli

Cesari²,

Danzeca

et al. 2019

IEEE Trans. Nucl. Sci.

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In the context of achieving an efficient radiation monitoring system, while also aiming to increase the flexibility of the measurement system, the integrated digital and analog circuitries of the floating gate dosimeter (FGDOS) have been upgraded. The capability to control autonomously the recharge process and the easy access to the data allows exploiting the FGDOS in both the autonomous and passive mode. The former provides the cumulated dose measurement by a sensor coupled to a digital interface. The latter implies the reading of the dose only after the irradiation time, performing the dose detection by positioning the sensor without any supply. In this paper, the functionality and characterization of the new features of the FGDOS are demonstrated. The resolution, the dose range, and the error introduced on the measurements are discussed in detail by analyzing the results of irradiation experiments. The use of a filtering technique in different radiation environments is discussed, as well as the capability to retain the information after multiple readings and the power consumption for each configuration.

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Section: Conceptmentioning

confidence: 99%

Investigation on Passive and Autonomous Mode Operation of Floating Gate Dosimeters

Brucoli

Cesari²,

Danzeca

et al. 2019

IEEE Trans. Nucl. Sci.

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“…The dosimetry of ionizing radiation using radiation-sensitive MOSFETs is based on the threshold voltage shift, conversion into absorbed radiation dose D [25,26]. This shift originates in the radiation-induced electron-hole pairs formed during irradiation.…”

Section: Mechanisms Responsible For Threshold Voltage Shift During Irmentioning

confidence: 99%

Application of pMOS Dosimeters in Radiotherapy

Pejović¹

2017

Radiotherapy

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The results of a study on pMOS dosimeters manufactured by Tyndall National Institute, Cork, Ireland and their sensitivity on radiation doses used in radiotherapy are presented. Firstly, we deal with analysis of defect precursors created by ionizing radiation, responsible for increase in fixed and switching traps, which are further responsible for threshold voltage shift as a dosimetric parameter. Secondly, influence of some parameters, such as gate bias during irradiation, gate oxide thickness and photons energies, on threshold voltage shift is presented. Fading of irradiated pMOS dosimeters and possible application of commercial MOSFETs in ionizing radiation dosimetry are also presented.

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“…In space radiation environment, cosmic rays and solar electromagnetic radiation bring the unfavorable single-event-transient (SET) effect, resulting in increased probability of soft-error, reliability degradation, function abnormal and even failure of semiconductor devices and circuits. [12][13][14] It is meaningful to analyze the SET effect on TFETs, so as to evaluate the potential of TFETs for space applications. Abundant literatures on SET effect are available for MOSFETs and MOSFET-based circuits.…”

Section: Introductionmentioning

confidence: 99%

Single-event-transient effect in nanotube tunnel field-effect transistor with bias-induced electron-hole bilayer

et al. 2022

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In this paper, the single event transient (SET) effect in nanotube tunneling field-effect transistor with bias-induced electron-hole bilayer (EHBNT-TFET) is investigated by 3-D TCAD simulation for the first time. The effects of linear energy transfer (LET), characteristic radius, strike angle, electrode bias and hit location on SET response are evaluated in detail. The simulation results show that the peak value of transient drain current is up to 0.08 mA for heavy ion irradiation with characteristic radius of 50 nm and LET of 10 MeV·cm2/mg, which is much higher than ON-state current of EHBNT-TFET. The SET response of EHBNT-TFET presents an obvious dependence on LET, strike angle, drain bias and hit location. As LET increases from 2 MeV·cm2/mg to 10 MeV·cm2/mg, the peak drain current increases monotonically from 0.015 mA to 0.08 mA. The strike angle has an greater impact on peak drain current especially for the smaller characteristic radius. The peak drain current and collected charge increases 0.014 mA and 0.06 fC respectively as drain bias ranges from 0.1 V to 0.9 V. Whether from horizontal or vertical direction, the most sensitive hit location is related to w t . The underlying physical mechanism is explored and discussed.

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Radiation Sensor Compatible With Standard CMOS Technology

Cited by 16 publications

References 6 publications

Investigation on Passive and Autonomous Mode Operation of Floating Gate Dosimeters

Investigation on Passive and Autonomous Mode Operation of Floating Gate Dosimeters

Application of pMOS Dosimeters in Radiotherapy

Single-event-transient effect in nanotube tunnel field-effect transistor with bias-induced electron-hole bilayer

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