Investigation on Passive and Autonomous Mode Operation of Floating Gate Dosimeters

Brucoli, M.; Cesari, J.; Danzeca, Salvatore; Brügger, M.; Masi, A.; Pineda, A.; Dusseau, L.; Wrobel, Frédéric

doi:10.1109/tns.2019.2895366

Cited by 11 publications

(3 citation statements)

References 16 publications

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“…However, the dependence of absorbed dose is not linear. Maybe, if we use this biasing configuration in recharging mode, such as presented by the group of authors [36][37][38], the dependence of the absorbed dose can be linear and even with higher sensitivity. In that case, the radiation sensor should have some extended electronics that will continuously measure and do recharging.…”

Section: Biases During Irradiationmentioning

confidence: 99%

Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor

Ilić

Jevtic

Stanković³

et al. 2020

Sensors

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This paper describes the possibility of using an Electrically Programmable Analog Device (EPAD) as a gamma radiation sensor. Zero-biased EPAD has the lowest fading and the highest sensitivity in the 300 Gy dose range. Dynamic bias of the control gate during irradiation was presented for the first time; this method achieved higher sensitivity compared to static-biased EPADs and better linear dependence. Due to the degradation of the transfer characteristics of EPAD during irradiation, a function of the safe operation area has been found that determines the maximum voltage at the control gate for the desired dose, which will not lead to degradation of the transistor. Using an energy band diagram, it was explained why the zero-biased EPAD has higher sensitivity than the static-biased EPAD.

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Section: Biases During Irradiationmentioning

confidence: 99%

Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor

Ilić

Jevtic

Stanković³

et al. 2020

Sensors

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“…Concerning the TID, the RadFets used on the RadMON require a complex circuitry made of several components that are relatively power consuming and not easily replaceable. On the other hand, CERN has been collaborating for many years on the development of a new fully digital Floating Gate DOSimeters (FGDOS) [21] that does not require any external circuitry. Its SPI bus and different working modes such as passive mode fit perfectly with the system requirements.…”

Section: E Radiation Sensormentioning

confidence: 99%

Testing and Validation Methodology for a Radiation Monitoring System for Electronics in Particle Accelerators

Zimmaro

Ferraro

Boch

et al. 2022

IEEE Trans. Nucl. Sci.

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In this work, a methodology for the design and validation of a radiation monitoring system for electronic systems in particle accelerators is presented. The methodology expands the common Radiation Hardness Assurance (RHA) procedure implemented at CERN, including new steps dedicated to both system-level testing, focused on a wireless device, and sensors characterization and readout validation. A case study demonstrating the validity of this methodology is proposed with the qualification of a novel battery-powered wireless radiation monitoring system. This system not only represents the validation vehicle of the methodology but also an innovation in terms of monitoring platform due to its flexibility and improved capabilities. The application of this methodology allowed its full qualification, providing useful data in terms of resistance to radiation, lifetime, and failure rate in operation, demonstrating the validity of the testing strategy proposed in the paper.

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“…Compared to RADFET and FOXFET devices, FGMOS based radiation sensors are preferred in recent times considering the ease of on-chip integration with the peripheral circuits. FGMOS dosimeters are also being investigated for high-dose level monitoring in accelerator environments using the repeated measurement technique as reported in [70,71].…”

Section: Radiation Sensitive Mosfet Devicesmentioning

confidence: 99%

A Review of Semiconductor Based Ionising Radiation Sensors Used in Harsh Radiation Environments and Their Applications

et al. 2021

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This article provides a review of semiconductor based ionising radiation sensors to measure accumulated dose and detect individual strikes of ionising particles. The measurement of ionising radiation (γ-ray, X-ray, high energy UV-ray and heavy ions, etc.) is essential in several critical reliability applications such as medical, aviation, space missions and high energy physics experiments considering safety and quality assurance. In the last few decades, numerous techniques based on semiconductor devices such as diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs) and solid-state photomultipliers (SSPMs), etc., have been reported to estimate the absorbed dose of radiation with sensitivity varying by several orders of magnitude from μGy to MGy. In addition, the mitigation of soft errors in integrated circuits essentially requires detection of charged particle induced transients and digital bit-flips in storage elements. Depending on the particle energies, flux and the application requirements, several sensing solutions such as diodes, static random access memory (SRAM) and NAND flash, etc., are reported in the literature. This article goes through the evolution of radiation dosimeters and particle detectors implemented using semiconductor technologies and summarises the features with emphasis on their underlying principles and applications. In addition, this article performs a comparison of the different methodologies while mentioning their advantages and limitations.

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Investigation on Passive and Autonomous Mode Operation of Floating Gate Dosimeters

Cited by 11 publications

References 16 publications

Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor

Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor

Testing and Validation Methodology for a Radiation Monitoring System for Electronics in Particle Accelerators

A Review of Semiconductor Based Ionising Radiation Sensors Used in Harsh Radiation Environments and Their Applications

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