Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment

Temporal and Dose Kinetics of Tunnel Relaxation of Non-Equilibrium Near-Interfacial Charged Defects in Insulators

“…In contrast, the true dose rate effects, such as ELDRS, exhibit opposite tendency. According to [39], the ELDRS effect is due to decreasing of the charge yield with dose rate increase, caused by the excess trap-assisted recombination in insulators. Thus, the competition between opposite types of dose rate dependencies in the true-dose-rate and the time-dependent processes is formally expressed in competition of two factors…”

Multi-scale modeling of low dose-rate total dose effects in advanced microelectronics

“…It has been supposed in [8] that the Low Dose Rate Sensitivity (ELDRS) is a general property of thick layers of amorphous insulators with low electric fields irrespective to specific technology (bipolar or CMOS) and/or concrete mechanisms of degradation (interface trap formation, bandbending in base region). According to [8] all ELDRS effects are in fact due to true dose rate (also irradiation temperature T, electric field E ox and insulator thicknesses d ox ) dependencies of charge yield caused by excess recombination between mobile and localized carriers.…”

“…According to [8] all ELDRS effects are in fact due to true dose rate (also irradiation temperature T, electric field E ox and insulator thicknesses d ox ) dependencies of charge yield caused by excess recombination between mobile and localized carriers.…”

Functional and Parametrical Control of Temperature Sensors with the NI MyRIO Module

“…The digital temperature sensor is one of the most used elements in different electrical systems [1][2][3][4]. It determines the object or environment temperatures with the required accuracy [5,6].…”