2008 26th International Conference on Microelectronics 2008
DOI: 10.1109/icmel.2008.4559355
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Multi-scale modeling of low dose-rate total dose effects in advanced microelectronics

Abstract: Multi-scale approach based on physical, circuit and system levels for radiation effects modeling is considered. The model of low dose rate sensitivity of subthreshold leakage current is presented. Parameters for SPICE simulation can be obtained.

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“…The major danger for CCDM behind a concrete floor is represented by the residual neutron flux, causing displacement of silicon atoms in a lattice and nuclear reactions in pixels of the silicon matrix [6].…”
Section: Shielding Design and Simulationmentioning
confidence: 99%
“…The major danger for CCDM behind a concrete floor is represented by the residual neutron flux, causing displacement of silicon atoms in a lattice and nuclear reactions in pixels of the silicon matrix [6].…”
Section: Shielding Design and Simulationmentioning
confidence: 99%