Radiation response analysis of wide-gap p-AlInGaP for superhigh-efficiency space photovoltaics

Abstract

We present here the direct observation of the majority and minority carrier defects generation from wide-band-gap (2.04eV) and thick (2μm) p-AlInGaP diodes and solar cells structures before and after 1MeV electron irradiation by deep level transient spectroscopy (DLTS). One dominant hole-emitting trap H1 (EV+0.37±0.05eV) and two electron-emitting traps, E1 (EC−0.22±0.04eV) and E3 (EC−0.78±0.05eV) have been observed in the temperature range, which we could scan by DLTS. Detailed analysis of the minority carrier injection annealing experiment reveals that the H1 center has shown the same annealing characteristics, which has been previously observed in all phosphide-based materials such as InP, InGaP, and InGaAsP. The annealing property of the radiation-induced defects in p-AlInGaP reveals that multijunction solar cells and other optoelectronic devices such as light-emitting diodes based on this material could be considerably better to Si and GaAs in a radiation environment.

High efficiency InGaP/GaAs solar cell with Sub-wavelength structure on AlInP window layer

“…In solar cell applications, the conversion efficiency of GaAs solar cells either predicted by theoretical calculation or demonstrated by practical fabrication is found to be higher than that of silicon [1]. This is because GaAs solar cells can provide physically direct bandgap and latticematch properties; for example, a p + -n GaAs solar cell with a base layer thickness of 3.3 m can absorb 97% of the solar air mass 1.5 global illumination spectrum, and the generated carriers with high mobility ensure that they can reach the junction before any recombination process takes place.…”

Optimum design of InGaP/GaAs/Ge triple-junction solar cells with sub-wavelength surface texture structure

“…In solar cell applications, the conversion efficiency of GaAs solar cells either predicted by theoretical calculation or demonstrated by practical fabrication is found to be higher than that of silicon [4]. This is because GaAs solar cells can provide physically direct bandgap and latticematch properties.…”

Efficiency enhancement InGaP/GaAs dual-junction solar cell with sub-wavelength antireflection nanorod arrays

“…Although, the III-V compound solar cell structure seems to involve a complicated in situ epitaxial growth, further substantial works are required to produce high-efficient and low-cost III-V compound solar cells. [4][5][6] To our knowledge, relevant works on the development of using the surface texture process in the fabrication of III-V compound solar cells are rare. Therefore, a novel process of surface nanorod arrays is presented in the fabrication of InGaP/GaAs dual-junction solar cells in this study.…”