2011 37th IEEE Photovoltaic Specialists Conference 2011
DOI: 10.1109/pvsc.2011.6186360
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Optimum design of InGaP/GaAs/Ge triple-junction solar cells with sub-wavelength surface texture structure

Abstract: In this study, we design the InGaP/GaAs/Ge triplejunction solar cells by optimizing short-circuit current matching between top and middle cells using Crosslight APSYS software. The base thickness of top InGaP cell is optimized at 0.36 um and the base thickness of middle GaAs cell is optimized at 3.2 um under AM1.5G illumination. For the optimized solar cell with nanorod arrays surface texture structure, the maximum I sc is 13.512 mA/cm 2 , the open-circuit voltage (V oc ) is 2.614 V, and the conversion efficie… Show more

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Cited by 3 publications
(4 citation statements)
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“…It has been stated before that the short circuit current in a multijunction cell is determined by the sub-cell producing the lowest current [3]. It is apparent from the results that in this case, InGaAs is that sub-cell.…”
Section: Results For Multijunction and Single Junction Cellmentioning
confidence: 65%
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“…It has been stated before that the short circuit current in a multijunction cell is determined by the sub-cell producing the lowest current [3]. It is apparent from the results that in this case, InGaAs is that sub-cell.…”
Section: Results For Multijunction and Single Junction Cellmentioning
confidence: 65%
“…For higher efficiency, the device structure design, novel materials, epitaxial layer quality improvement and device process of improving optical absorption properties are presented in literature [1]- [6]. In this regard, multijunction solar cells based on III-V compound semiconductors have received much attention in recent years because they can provide wide range absorption in the solar spectrum from visible to infrared and generate high conversion efficiency [1]- [3]. This can not be achieved with a single junction cell which has limited wavelength response specified by bandgap.…”
Section: Introductionmentioning
confidence: 99%
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