1991
DOI: 10.1088/0953-8984/3/47/007
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Radiation-produced electron and hole centres in oxygen-containing BaFBr. II. An ENDOR study of OF-

Abstract: Oxygen contamination introduces hole-trapping centres into barium flumohalides. In the preceding paper, an 0centre WM reported as the product of the reaction between out-of-plane Br; VI; centres and oxide impurities. This paper describes an ENDOR study of this centre which identifies it as 0;. M oxygen ion substituted at a fluoride site. No evidence has been found for the presmce of a neighbouring defect (anion v-cy or interstitid cation) remaining from its charge-compensating role for the proposed p r e m o r… Show more

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Cited by 20 publications
(12 citation statements)
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“…After the exciton decay the electron is trapped at that vacancy and the V K center formed migrates away at room temperature and may transfer its hole to another defect ͑note, V K centers are not stable at room temperature 9,15-17 ͒. For example, it reacts with O F 2Ϫ to form O F Ϫ , 15,16 but there may also be another, unknown, hole center ͑see the discussion in Ref. 3-5͒. It seems that for the preferential generation of F͑Br Ϫ ͒ and F A ͑Br Ϫ ͒ centers the origin of the Br Ϫ vacancies is not important.…”
Section: Discussionmentioning
confidence: 99%
“…After the exciton decay the electron is trapped at that vacancy and the V K center formed migrates away at room temperature and may transfer its hole to another defect ͑note, V K centers are not stable at room temperature 9,15-17 ͒. For example, it reacts with O F 2Ϫ to form O F Ϫ , 15,16 but there may also be another, unknown, hole center ͑see the discussion in Ref. 3-5͒. It seems that for the preferential generation of F͑Br Ϫ ͒ and F A ͑Br Ϫ ͒ centers the origin of the Br Ϫ vacancies is not important.…”
Section: Discussionmentioning
confidence: 99%
“…The isotope substitution of 17 O for 16 O proved that the defect centre of Fig. 14, always produced upon X-irradiation of BaFBr, is due to an oxygen contamination [39].…”
Section: Generation Of Hole Trap Centresmentioning
confidence: 91%
“…Above 120 K the V K ðBr À 2 Þ centres become mobile, react with the O 2À F centres and form O À F hole trap centres. Above 200 K the F(Br --) centres can diffuse away and become isolated [39,43]. The microscopic structure of the O À F defect ( Fig.…”
Section: Generation Of Hole Trap Centresmentioning
confidence: 99%
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