Radiation induced electrical and microstructural degradation at high temperature for HP SiC

Radioluminescence for in situ materials characterization: First results on SiC for fusion applications

“…Despite the differences in the irradiation conditions and measuring systems, the two methods give comparable results. Work to try to identify the defects responsible for the observed emissions, effect of dose rate, and cause of the reduction with dose, is now underway [20], as well as work to correlate RL with changes in the electrical conductivity and crystalline structure of the different materials [17]. If successful one may then consider RL as a potential tool for in situ measurement and control of SiC degradation in both fission reactor experiments and future fusion devices.…”

“…Work on radiation degradation of electrical and microstructural properties is underway [17], as well as RL measurements to characterize SiC, and other ceramics. The ion beam induced luminescence (IBIL) facility at IMR Sendai and the electron beam RL facility at CIEMAT, Madrid, where much of the fusion related luminescence work has been performed, are now being developed as complementary systems for characterization and to enable radiation induced material modification and degradation to be observed during irradiation (in situ).…”

Ion/Electron Induced Luminescence for Radiation Damage Process Interpretation and In Situ Material Verification

“…As may be seen, the two lots of material showed more than one order of magnitude difference in initial conductivity values. [12] In Figure 3, RL spectra for both batches show the similar difference, the intensity for B2 being almost four times higher than B1. The behaviour with dose has been found to be the same for the two samples in both cases, indicating similar mechanisms are responsible for changes in conductivity and luminescence.…”

“…Although certainly insufficient, significant results for hot pressed SiC have been obtained that suggest the same mechanisms dominate luminescence and conductivity evolution with irradiation dose [12]. Figure 6 shows volume electrical conductivity evolution as a function of ionizing dose normalized to initial values.…”

“…7. RL spectra for HP SiC at 35 º C, for as-received samples and following prior irradiation to 420 MGy at 290, 450 and 650, and 800 º C. Figure taken from [12].…”