Radiation-Induced Charge Trapping and Low-Frequency Noise of Graphene Transistors

Low-frequency noise in nanowires

“…8(b). 73,90,157,158 The LF noise of MOS devices with 2D materials (e.g., graphene, MoS 2 , BP) as channels typically is dominated by border traps with defect energy distributions similar to those in Fig. 7(b).…”

“…However, traps at the 2D material surface can intro-duce sources of scattering-induced noise, RTN, instability, and/or part-to-part variations that can be much larger than observed in Si MOS transistors. 73,121,134,[158][159][160][161][162][163][164][165] Finally, carbon nanotube transistors (CNTs) can show a wide range of responses, including giant LF noise if surfaces are unpassivated or if mesh percolation significantly affects transport, border-trap related noise due to charge exchange between the CNT and adjacent oxides, and/or bulk LF noise. [166][167][168][169][170][171][172][173] Knowing the microstructures of the defects that lead to LF noise and RTN enables process improvements to device response.…”

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2Gate Dielectrics

“…In the previous almost 100 years, low-frequency noise with spectral density inversely proportional to frequency ( )S f f  at frequencies f<100 kHz, where α ≈ -1, has been observed and extensively investigated in a variety of microelectronic materials and devices: from metal films, wires and resistors [1] to high-electron-mobility transistors [2], solar cells [3] and graphene devices [4], [5]. It has been found that different physical mechanisms can be responsible for the 1/f noise in different electronic systems.…”

“…. 1/f noise vs temperature before and after irradiation and after high-temperature annealing of graphene transistors from[5].CHAPTER IIII. EXPERIMENTAL DETAILSThis chapter provides information about the studied devices and experimental setups.…”