Low-frequency noise in nanowires

Fleetwood, D.M.

doi:10.1039/d3nr02427j

Nanoscale

2023

DOI: 10.1039/d3nr02427j

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Low-frequency noise in nanowires

D.M. Fleetwood

Abstract: 40 years of research on low-frequency (LF) noise and random-telegraph noise (RTN) in metallic and semiconducting nanowires (NWs) demonstrate the importance of defects and impurities to each system. The fluctuating...

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2024

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Cited by 5 publications

References 223 publications

(1,074 reference statements)

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Low-Frequency Noise Due to Iron Impurity Centers in GaN-Based HEMTs

Fleetwood,

Li,

Zhang

et al. 2024

IEEE Trans. Electron Devices

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Low-Frequency Noise Due to Iron Impurity Centers in GaN-Based HEMTs

Fleetwood,

Li,

Zhang

et al. 2024

IEEE Trans. Electron Devices

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Effects of Interface Traps and Hydrogen on the Low-Frequency Noise of Irradiated MOS Devices

Fleetwood,

Zhang,

Schrimpf

et al. 2024

IEEE Trans. Nucl. Sci.

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Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs

Bonaldo,

Wallace,

Barnaby

et al. 2024

IEEE Trans. Nucl. Sci.

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We provide comprehensive experimental data and technology computer-aided design simulations to clarify totalionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel FinFETs irradiated to ultra-high doses the transconductance evolution rebounds (increase up to 3-10 Mrad followed by a decrease), while the drain-to-source leakage current steadily augments until reaching a plateau at very large doses. These effects result from positive charge trapping deep in the sidewalls of the shallow trench isolation (STI) and negative trapped-charge accumulation localized in the upper STI corners. Larger sizes of inter-fin STI enhance the leakage current degradation of transistors with smaller numbers of fins. Hydrogen-induced border-trap and/or interface-trap generation at the Si/oxide interface at the STI corners leads to increased low-frequency noise at doses > 10 Mrad(SiO2). These results show that the quality of oxides and interfaces in the upper region of the STI adjacent to the device channel is crucial for the tolerance to ultra-high radiation of modern FinFET technologies.

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Low-frequency noise in nanowires

Abstract: 40 years of research on low-frequency (LF) noise and random-telegraph noise (RTN) in metallic and semiconducting nanowires (NWs) demonstrate the importance of defects and impurities to each system. The fluctuating...

Cited by 5 publications

References 223 publications

Low-Frequency Noise Due to Iron Impurity Centers in GaN-Based HEMTs

Low-Frequency Noise Due to Iron Impurity Centers in GaN-Based HEMTs

Effects of Interface Traps and Hydrogen on the Low-Frequency Noise of Irradiated MOS Devices

Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs

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