Radiation-induced carbon-related defects in p-type silicon

Abstract

The production and removal of carbon-related defects have been investigated in 1-MeV electron-irradiated boron-doped silicon solar cells using deep level transient spectroscopy (DLTS). In Czochralski (CZ) material, the interstitial carbon defect (hole trap at Ev+0.27 eV), CI, decays by thermal and charge injection processes. We find that irradiation by MeV electrons creates CI while simultaneously removing it through the minority-carrier injection process. Removal of CI correlates with significant growth in the density of a complex reportedly consisting of carbon and oxygen (hole trap at Ev+0.38 eV). Thermal annealing produces a different DLTS signal than does minority-carrier injection indicating that the carbon and oxygen complex (C+O) is at least two species. The effective cross section for minority-carrier-induced annealing of CI is found to be 2×10−18 cm2 in these samples.

Forward current enhanced elimination of the radiation induced boron-oxygen complex in silicon n+ -p diodes

“…In silicon, the recombination enhancement of migration was found to be characteristic for many single interstitial atoms formed as result of irradiation. These are silicon self‐interstitial (Si i ) , aluminum interstitial (Al i ) , boron interstitial (B i ) and carbon interstitial (C i ) .…”

Formation and annealing of metastable (interstitial oxygen)-(interstitial carbon) complexes in n- and p-type silicon

“…Nevertheless, one may expect the formation of this complex as a result of the recom bination induced diffusion of C i [7]. The possibility that a comparatively low H035 peak observed immedi ately after irradiation cannot be excluded as belonging to some as yet unidentified defect [11].…”

“…It is clear that, in this case, a simple method for processing the data is found to be unsuit able and a special procedure is required. It is exactly the complexity of analysis of the H035b that accounts for the relatively large spread in the parameters determined by different researchers [4,5,7]. The existence of such spread induces doubts about the cor rectness of the procedure for simultaneous determina tion of concentration of centers under study as reported in the mentioned publications.…”

“…Generally speaking, the possibility of the imple mentation of these two different mechanisms of the formation of a C i O i complex can be related to features of the influence of electronic processes on C i diffusion [7] and to the appearance of specific features in the formation of the stable C i O i configuration in Si crys tals with different types of doping. However, such interpretation is not consistent with the data of infra red spectroscopy [3], according to which, even at very high doses of electron irradiation, the simultaneous formation of and C i O i complexes takes place.…”

Evolution and Impact of Defects in a p-Channel CCD After Cryogenic Proton-Irradiation

“…These two defects have been studied extensively with the donor level of the divacancy established as having an energy level of around E v + 0.20 eV [5][6] [7] and the carbon interstitial an energy level of E v + 0.27 eV [8] [9].…”