Forward current enhanced elimination of the radiation induced boron-oxygen complex in silicon n + -p diodes

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This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.In the present work, we report local vibrational mode (LVM) related absorption lines which are assigned to the complex incorporating interstitial boron and interstitial oxygen atoms (B i O i ), a possible precursor of the center responsible for lightinduced degradation (LID) in solar cells produced from boron-doped oxygen-rich silicon. Fourier transform infrared absorption (IR) spectroscopy was used for detection and analysis of absorption lines due to defects which were created in boron-doped Czochralski-grown Si samples by irradiation with 6 or 10 MeV electrons at room temperature. Changes in the IR absorption spectra upon isochronal annealing of the irradiated samples in the temperature range 75-225 8C have also been monitored. A set of previously unreported LVM lines with the same formation and elimination behavior has been studied. The most intense lines of the set are found to be at 991, 721, and 550 cm À1 . On the basis of an analysis of changes in intensity of the lines with the concentrations of impurities in the silicon and on the similarity of their annealing features with those for the DLTS signal due to the B i O i center, it is argued that the lines are related to the LVMs of this defect. The positions of the lines have been compared with the previously reported LVMs derived from ab initio modeling calculations for different configurations of the B i O i complex. A configuration having calculated LVMs close to those determined experimentally has been found and the origins of the modes are discussed.

Section: Resultssupporting

confidence: 84%

Section: Introductionmentioning

confidence: 99%

Local vibrational modes of interstitial boron–interstitial oxygen complex in silicon

Мурин

Ластовский

Tolkacheva

et al. 2016

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“…In the previous studies , it was shown by DLTS that the B i C s complexes in boron‐doped Cz‐Si arise synchronously with the dissociation of B i O i defects. The annealing temperature for B i O i , according to the studies is 150–200 °C, i.e., slightly higher than that for B i B s defects observed by us. Taking into account the closeness of these two annealing processes, it can be concluded that B i atoms liberated as a result of the dissociation of both B i B s and B i O i are involved in the formation of B i C s defects in the oxygen‐rich material.…”

Section: Resultscontrasting

confidence: 51%

“…The investigations of the boron‐related radiation defects in Si have been done in the main by deep level transient spectroscopy (DLTS) and electron paramagnetic resonance (EPR) . The main defect appearing in boron‐doped Si under the irradiation is known to be interstitial boron (B i ), which is created through the interaction of a self‐interstitial atom (I) with substitutional boron .…”

Section: Introductionmentioning

confidence: 99%

“…B i can be trapped by substitutional boron (B s ) and by the main impurities of Si such as oxygen and carbon with the formation of B i B s , B i O i , and B i C s complexes, respectively . The level at E c – 0.23 eV is ascribed to B i O i defect due to the correlation of its formation with the boron and oxygen concentrations in samples . The defect consisting of interstitial boron and oxygen was believed to be also responsible for the light‐induced degradation of Si solar cells .…”

Section: Introductionmentioning

confidence: 99%

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Electronic absorption of interstitial boron‐related defects in silicon

Khirunenko

Sosnin

Duvanskii

et al. 2017

Phone: þ38 044 525 98 21, Fax: þ38 044 525 15 89We report the data on the electronic absorption of interstitial boron-related defects in silicon, irradiated with 5 MeV electrons. Two new electronic absorption features have been revealed in the spectrum of boron-doped Si. The sharp line at 4385.2 cm À1 is detected in Si irradiated at 80 K and subjected to the subsequent annealing up to 300 K. The emergence of the registered line depends on the concentration of boron and does not depend on the presence of oxygen and carbon in the samples. The revealed line is associated with B i B s complex. It is shown that the presence of oxygen in the samples inhibits the formation of B i B s defects. The disappearance of the 4385.2 cm À1 line upon annealing is accompanied by the emergence of a line at 7829.5 cm À1 in the spectrum. The appearance of the 7829.5 cm À1 line depends on the presence of carbon in the samples. The registered 7829.5 cm

Formation of a Bistable Interstitial Complex in Irradiated p‐Type Silicon

Makarenko

Lastovski²,

Yakushevich³

et al. 2019

The influence of the injection of minority charge carriers on the formation of a divalent bistable defect (DBH) having two energy levels of Ev + 0.44 eV and Ev + 0.53 eV in its metastable configuration is investigated. Using forward current injection, the formation temperature of this defect in p‐type silicon can be lowered by about 50 °C. The production of such bistable defect is enhanced in materials with a high ratio of boron to carbon concentrations. This allows one to conclude that the boron atom is one of the constituents of the defect under study. There is also a correlation between the behavior of the bistable hole traps and a metastable electron trap observed earlier. It is concluded that these traps are related to metastable and stable configurations of the DBH defect, which has inverse occupancy level ordering in its stable configuration.