Radiation induced carbon complexes in gallium arsenide

Carlone, C.; Rejeb, Chedly; Jorio, Anouar; Parenteau, M.; Khanna, Shyam M.

doi:10.1016/0168-583x(94)95581-6

Cited by 5 publications

(1 citation statement)

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“…Moreover, the weakening of impurity-related luminescence can be accounted for by the formation of inactive impurity-defect complexes due to Coulomb attraction between impurities and defects with opposite charges. Khanna et al [57,58] have reported that electron irradiation with low fluences (10 10 -10 12 cm À2 ) could enhance the migration and reaction of defects in GaAs, which could be detected by PL spectra. This is consistent with our explanations.…”

Section: Damage Mechanism Of γ Irradiationmentioning

confidence: 99%

γ‐Irradiation Damage Mechanism of InGaAs/InP p–i–n Focal Plane Array Investigated by Spatially Resolved and Temperature‐Dependent Photoluminescence

Cai

Zhu

Wang

et al. 2023

Physica Status Solidi (b)

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InGaAs infrared photodetectors subjected to irradiation environments undergo microstructural modifications and concomitant degradation, yet the underlying microscopic mechanism has not been fully studied. Herein, the influence of γ irradiation (total dose of 20 krad(Si)) on an In0.53Ga0.47 As/InP p–i–n focal plane array is studied by spatially resolved and temperature‐dependent (3–290 K) photoluminescence (PL) measurements. By comparative PL studies of pre‐irradiation and post‐irradiation, the spatially resolved PL results of irradiation indicate that the in‐plane uniformity of all PL features presents bigger fluctuations, meanwhile, the results of temperature‐dependence PL demonstrate that the PL integral intensity related to impurities and interface‐bound states is significantly weakened after irradiation. This can be attributed to the enhanced migration and reaction of defects caused by γ irradiation. Some mobile defects tend to migrate to lower energy regions, such as interfaces, and form defect complexes. In addition, some impurities combine with mobile defects and form inactive impurity–defect complexes. The findings reveal the effects of low‐dose γ irradiation on InGaAs devices and may provide useful information for enhancing radiation resistance.

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Section: Damage Mechanism Of γ Irradiationmentioning

confidence: 99%

γ‐Irradiation Damage Mechanism of InGaAs/InP p–i–n Focal Plane Array Investigated by Spatially Resolved and Temperature‐Dependent Photoluminescence

Cai

Zhu

Wang

et al. 2023

Physica Status Solidi (b)

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Formation of EL2, AsGa and U band in irradiated GaAs: Effects of annealing

Jorio

Carlone

Parenteau

et al. 1996

Journal of Applied Physics

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Gallium arsenide (GaAs) which was grown by metallorganic chemical vapor deposition, doped n with silicon to 2×1015 cm−3, and irradiated at room temperature with 1 MeV neutrons in the fluence range 1012 cm−2 to 3×1015 cm−2, has been studied by deep level transient spectroscopy (DLTS) and by far infrared photoluminescence (PL) spectroscopy. We report the effect of annealing at 550 °C for 30 min, which, in irradiated GaAs, is to introduce the gallium vacancy (VGa). The DLTS signal at 780±40 meV, attributed to the EL2 deep level, has an introduction rate of about 3×10−2 cm−1 in the unannealed case, and 0.19±0.02 cm−1 in the annealed case. The PL signal at 702 meV has been attributed to a phonon-assisted transition of the EL2 defect, a defect which has been identified as the isolated arsenic antisite (AsGa+). The PL peak increases in intensity up to fluences of 3×1013 cm−2, before decreasing at higher fluences. After annealing, its intensity increases up to fluences of 1015 cm−2, before decreasing at the highest fluence studied. The similar behavior of the DLTS and PL signals with respect to irradiation and annealing confirms that they have the same origin. It also supports the AsGa point defect model of EL2. The decrease in PL intensity at high fluences is attributed to radiationless transitions involving radiation-induced complexes such as the U band, EL6, and EL14 observed by DLTS. After annealing, the concentration of these defects is reduced to a large extent, but weaker sharper peaks remain in the DLTS spectrum. We suggest that the U band consists of complexes involving AsGa and acceptors like VGa.

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