Electron and neutron radiation-induced order effect in gallium arsenide

Khanna, Shyam M.; Rejeb, Chedly; Jorio, Anouar; Parenteau, M.; Carlone, C.; Gerdes, J.

doi:10.1109/23.273532

Cited by 37 publications

(10 citation statements)

References 18 publications

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“…It is unclear why this is the case. Previously reported measurements [4] imply that there should be noticeable damage at fluence levels of 10 15 electrons/cm 2 . It is possible that there was a mistake during irradiation, and the photodiodes were irradiated with fluence levels lower than intended.…”

Section: Discussionmentioning

confidence: 99%

“…It has been proposed that there is a radiation-induced order effect in GaAs, similar to the effect that thermal annealing can have on defects [4]. One model has suggested that recombination centers can be reduced by a migration of defects originally in the material as well as radiation-induced defects to surfaces, phase boundaries or interfaces [5].…”

Section: Ldrd Project Overviewmentioning

confidence: 99%

“…Previous work has compared the effects of electron and neutron irradiation on basic device properties such as carrier mobility [4]. We decided to also perform electron and neutron irradiation in the hope that comparisons could be made between our photodiode dark current, responsivity and bandwidth measurements and the previous bulk device properties such as carrier mobility and photoluminescence spectra.…”

Section: Technical Problem and Approachmentioning

confidence: 99%

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Final report on LDRD project 105967 : exploring the increase in GaAs photodiode responsivity with increased neutron fluence.

Blansett¹,

Geib²,

Cich³

et al. 2008

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A previous LDRD studying radiation hardened optoelectronic components for space-based applications led to the result that increased neutron irradiation from a fast-burst reactor caused increased responsivity in GaAs photodiodes up to a total fluence of 4.4x10 13 neutrons/cm 2 (1 MeV Eq., Si). The silicon photodiodes experienced significant degradation. Scientific literature shows that neutrons can both cause defects as well as potentially remove defects in an annealing-like process in GaAs. Though there has been some modeling that suggests how fabrication and radiation-induced defects can migrate to surfaces and interfaces in GaAs and lead to an ordering effect, it is important to consider how these processes affect the performance of devices, such as the basic GaAs p-i-n photodiode. In this LDRD, we manufactured GaAs photodiodes at the MESA facility, irradiated them with electrons and neutrons at the White Sands Missile Range Linac and Fast Burst Reactor, and performed measurements to show the effect of irradiation on dark current, responsivity and high-speed bandwidth. 4 AcknowledgmentsWe thank Victoria Montano for fabricating the GaAs photodiodes in the MESA microfab cleanroom. We thank Gordon A. Keeler for initially setting up the two single-frequency lasers for photodiode bandwidth measurements.

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Section: Discussionmentioning

confidence: 99%

Section: Ldrd Project Overviewmentioning

confidence: 99%

Section: Technical Problem and Approachmentioning

confidence: 99%

See 1 more Smart Citation

Final report on LDRD project 105967 : exploring the increase in GaAs photodiode responsivity with increased neutron fluence.

Blansett¹,

Geib²,

Cich³

et al. 2008

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“…On the other hand, an improvement of the electronic properties of GaAs material has been observed after an irradiation with low neutron fluences (3 × 10 12 neutrons/cm 2 ) [6]. The improvement of some bulk properties of GaAs material at low fluence irradiation has also been correlated with a high defect removal rate [7].We have investigated the influence of low neutron radiation doses on DC electrical performances of AlGaAs/InGaAs PHEMTs in order to improve their performance even if the technology of these devices is mature and industrialised. …”

mentioning

confidence: 96%

mentioning

confidence: 98%

DC electrical performance improvement of AlGaAs/InGaAs PHEMTs by using low thermal neutron radiation dose

Guhel¹,

Boudart²,

Gaquière³

et al. 2010

Electron. Lett.

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An original method is presented to improve DC electrical performance of AlGaAs/InGaAs PHEMTs by using a low neutron radiation dose. An increase of the drain -source saturation current, a decrease of the knee voltage and a reduction of the leakage current of the Schottky contact are observed without degrading the current-gain cutoff frequency when the devices are irradiated with a neutron radiation dose of 1.2 × 10 10 neutrons/cm 2 .Introduction: GaAs-based field effect transistors (FETs), and in particular pseudomorphic high electron mobility transistors (PHEMTs), are extensively used for millimetre-wave and optical communication systems owing to their excellent high-frequency and low-noise performances [1]. As these GaAs-based devices are intended to be used in military, nuclear industry and space applications [2], it is imperative to study their electrical and microwave behaviour in extreme radiation environments. Many previous papers have studied the neutron [3] and gamma [4] radiation effects on these devices. In general, the purpose of these studies is to show the high immunity of the transistors to radiationinduced degradation for doses lower than 2 × 10 14 neutrons/cm 2 . A degradation of electrical performance of devices has usually been observed for a total dose greater than 1 × 10 15 neutrons/cm 2 [5]. On the other hand, an improvement of the electronic properties of GaAs material has been observed after an irradiation with low neutron fluences (3 × 10 12 neutrons/cm 2 ) [6]. The improvement of some bulk properties of GaAs material at low fluence irradiation has also been correlated with a high defect removal rate [7].We have investigated the influence of low neutron radiation doses on DC electrical performances of AlGaAs/InGaAs PHEMTs in order to improve their performance even if the technology of these devices is mature and industrialised.

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γ‐Irradiation Damage Mechanism of InGaAs/InP p–i–n Focal Plane Array Investigated by Spatially Resolved and Temperature‐Dependent Photoluminescence

Cai

Zhu

Wang

et al. 2023

Physica Status Solidi (b)

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InGaAs infrared photodetectors subjected to irradiation environments undergo microstructural modifications and concomitant degradation, yet the underlying microscopic mechanism has not been fully studied. Herein, the influence of γ irradiation (total dose of 20 krad(Si)) on an In0.53Ga0.47 As/InP p–i–n focal plane array is studied by spatially resolved and temperature‐dependent (3–290 K) photoluminescence (PL) measurements. By comparative PL studies of pre‐irradiation and post‐irradiation, the spatially resolved PL results of irradiation indicate that the in‐plane uniformity of all PL features presents bigger fluctuations, meanwhile, the results of temperature‐dependence PL demonstrate that the PL integral intensity related to impurities and interface‐bound states is significantly weakened after irradiation. This can be attributed to the enhanced migration and reaction of defects caused by γ irradiation. Some mobile defects tend to migrate to lower energy regions, such as interfaces, and form defect complexes. In addition, some impurities combine with mobile defects and form inactive impurity–defect complexes. The findings reveal the effects of low‐dose γ irradiation on InGaAs devices and may provide useful information for enhancing radiation resistance.

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Electron and neutron radiation-induced order effect in gallium arsenide

Cited by 37 publications

References 18 publications

Final report on LDRD project 105967 : exploring the increase in GaAs photodiode responsivity with increased neutron fluence.

Final report on LDRD project 105967 : exploring the increase in GaAs photodiode responsivity with increased neutron fluence.

DC electrical performance improvement of AlGaAs/InGaAs PHEMTs by using low thermal neutron radiation dose

γ‐Irradiation Damage Mechanism of InGaAs/InP p–i–n Focal Plane Array Investigated by Spatially Resolved and Temperature‐Dependent Photoluminescence

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