Radiation hardness of wide-gap semiconductors (using the example of silicon carbide)

Lebedev, Alexander A.; Kozlovski, V. V.; Strokan, N. B.; Davydov, Denis; Иванов, А. М.; Strel'chuk, Anatoly M.; Yakimova, Rositsa

doi:10.1134/1.1521229

Cited by 39 publications

(16 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In order to describe this process in various materials, the removal rate for charge carriers V d is used; this parameter is defined as (2) where n 0 and n are the concentrations of charge carriers in the conduction band before and after irradiation and Φ is the radiation dose. Lebedev et al [64] considered the special features of determining the parameter V d for silicon carbide and wide-gap semiconductors (WGSs) in general. Deep-level centers with an ionization energy of տ1 eV can be formed in irradiated semiconductors with a wide band gap E g .…”

Section: The Rate Of Removal Of Charge Carriers In Silicon Carbidementioning

confidence: 99%

Radiation Resistance of SiC and Nuclear-Radiation Detectors Based on SiC Films

Lebedev¹

2004

Semiconductors

Self Cite

View full text Add to dashboard Cite

Available results of studying the radiation resistance of SiC and developing the nuclear-radiation detectors based on SiC are analyzed. The data on the ionization energies, capture cross sections, and plausible structure of the centers formed in SiC as a result of irradiation with various particles are reported. The effect of irradiation on the charge-carrier concentration and recombination processes is considered. Two aspects are covered in describing the results of designing SiC-based detectors and studying the detector parameters. First, the specific potential of SiC detectors for solving problems in nuclear physics is considered; typical examples of detector applications are given. Second, the relationship between detector characteristics and the properties of the starting material is considered; a number of methods for determining the specific parameters of SiC based on the characteristics of detectors are described. It is concluded that recent progress in the growth of high-quality SiC films (the difference impurity concentration ranges from 3 × 10 14 -3 × 10 15 cm -3 and the density of micropipe defects is no higher than 1 cm -2 ) makes it possible to include SiC in the class of materials that can be used to fabricate advanced nuclear detectors. The technological potential of SiC has been far from exhausted; undoubtedly, various configurations of SiC-based detectors (including multielement configurations) will be developed in the near future. © 2004 MAIK "Nauka/Interperiodica".

show abstract

Section: The Rate Of Removal Of Charge Carriers In Silicon Carbidementioning

confidence: 99%

Radiation Resistance of SiC and Nuclear-Radiation Detectors Based on SiC Films

Lebedev¹

2004

Semiconductors

Self Cite

View full text Add to dashboard Cite

show abstract

“…The emphasis on the difference in the measurement techniques is necessary because the capacitance-voltage data incompletely characterize the rate of introduction of radiation defects. Depending on the level depth, levels appearing in the energy gap contribute differently to the measured V d [11,12]. This occurs because the comparatively "shallow" levels among the deep levels formed are rather rapidly ionized in the SCR field of the p + -n junction at room temperature.…”

Section: H-sic (Cvd)mentioning

confidence: 99%

10.1007/s11453-008-2023-8

2010

CrossRef Listing of Deleted DOIs

View full text Add to dashboard Cite

Comparative study of the effect of successive (up to fluences of 3 × 10 16 cm -2 ) irradiation with 900 keV electrons of samples made of FZ-Si and 4 H -SiC (CVD) has been performed for the first time. Measurements on initial and irradiated samples were made using the van der Pauw method for silicon and the capacitance-voltage technique at a frequency of 1 kHz for silicon carbide. In addition, the spectrum of the defect levels introduced was monitored by the DLTS method for SiC. The carrier removal and defect introduction rates were determined for the two materials. It was found that the rates of defect introduction into FZ-Si and 4 H -SiC (CVD) are close to eachy other (~0.1 cm -1 ), which is largely due to the almost identical threshold energies of defect generation.

show abstract

“…Lohstroh, and P. J./ Sellin are with the Department of Physics, member of the South East Physics Network (SEPnet), University of Surrey, Guildford, GU2 7XH, UK, email: A.Lohstroh@surrey.ac.uk irradiation dose are said to be radiation hard [2] [3].…”

Section: Introductionmentioning

confidence: 99%

“…Silicon Carbide (SiC) is a material well known for its increased radiation hardness and reduced gamma sensitivity compared to commercial silicon [3] [4]. This allows the material to be used for the detection of radiation even in the presence of a high irradiation fluence [5].…”

Section: Introductionmentioning

confidence: 99%

Electrical Characteristics and Fast Neutron Response of Semi-Insulating Bulk Silicon Carbide

Bryant

Lohstroh

Sellin

2013

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

Abstract-The electrical characteristics and fast neutron response of a High Temperature Chemical Vapour Deposition (HTCVD) grown semi-insulating bulk SiC wafer has been measured. Current -Voltage measurements demonstrated a low leakage current in the region of 10 -10 to 10 -12 A with a bulk resistivity of at least 10 12 -10 13 Ω.cm. Alpha particle spectroscopy measurements demonstrated an electron charge collection efficiency of up to 90% with reasonable reproducibility of the acquired spectra. Evidence of (incident particle) rate dependent polarisation was seen following a constant applied bias combined with alpha irradiation over a period of time (order of tens of minutes). The ability of the wafer to detect fast neutrons was demonstrated and a comparison drawn with the MCNPX simulated response of a bulk SiC device. Comparing the MCNPX simulated response of a bulk SiC device to that of a silicon device suggests a superior ability to detect fast neutrons with an intrinsic efficiency 1.7 times that of silicon.

show abstract

Radiation hardness of wide-gap semiconductors (using the example of silicon carbide)

Cited by 39 publications

References 13 publications

Radiation Resistance of SiC and Nuclear-Radiation Detectors Based on SiC Films

Radiation Resistance of SiC and Nuclear-Radiation Detectors Based on SiC Films

10.1007/s11453-008-2023-8

Electrical Characteristics and Fast Neutron Response of Semi-Insulating Bulk Silicon Carbide

Contact Info

Product

Resources

About