Abstract:Comparative study of the effect of successive (up to fluences of 3 × 10 16 cm -2 ) irradiation with 900 keV electrons of samples made of FZ-Si and 4 H -SiC (CVD) has been performed for the first time. Measurements on initial and irradiated samples were made using the van der Pauw method for silicon and the capacitance-voltage technique at a frequency of 1 kHz for silicon carbide. In addition, the spectrum of the defect levels introduced was monitored by the DLTS method for SiC. The carrier removal and defect i… Show more
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