Radiation Hardness of ${\rm TiO}_{2}$ Memristive Junctions

Tong, William M.; Yang, J. Joshua; Kuekes, Philip J.; Stewart, Donald C.; Williams, R. Stanley; DeIonno, Erica; King, E. E.; Witczak, S.C.; Looper, M. D.; Osborn, J.V.

doi:10.1109/tns.2010.2045768

Cited by 66 publications

(36 citation statements)

References 18 publications

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“…While substantial research has been carried out on radiation effects in FeRAMs [18], [19], MRAMs [20], [21], and PCRAMs [22], [23], only a few reports on radiation response of ReRAM devices have been published. These include studies on TiO -based memristors [24] and our recent work on Cu-doped-HfO ReRAMs [12], [25].…”

Section: Introductionmentioning

confidence: 99%

Superior TID Hardness in TiN/HfO$_{2}$/TiN ReRAMs After Proton Radiation

Wang

Butcher

et al. 2012

IEEE Trans. Nucl. Sci.

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Resistive switching properties of valence change memory (VCM) resistive-random-access-memory (ReRAM) devices (TiN/HfO /TiN) are investigated after exposure to proton radiation with total ionizing doses (TID) of 1.5, 3, and 5 Grad(Si) and compared to similar measurements from electrochemical metallization memory (ECM) ReRAM devices (Pt/HfO :Cu/Cu). The TiN/HfO /TiN ReRAMs show significantly superior TID radiation-hardness compared to Pt/HfO :Cu/Cu ReRAMs: 1) All devices remained functional after radiation; 2) switching parameters including average , , , showed minimal or no degradation; and 3) TID radiation enhanced the uniformity of resistive switching among all VCM devices. The superior radiation responses of the VCM ReRAM devices relative to ECM ReRAMs result from the distinct conduction filament (CF) formation mechanisms. For the VCM ReRAM system, the radiation-induced vacancy density does not serve to inhibit the trap-assisted tunneling associated with the Hf-rich CF formation kinetics. On the contrary, vacancy-promoted charge trapping promotes VCM CF stability. In strong contrast, proton-induced vacancies for the ECM ReRAMs inhibit the formation of the metallic filament through internal field reduction due to charge trapping. The comparison of TID effects suggests that HfO -based VCM ReRAMs can be made radiation immune to a TID up to 5 Grad(Si) and may be highly suitable for rad-hard electronics applications.Index Terms-Hafnium oxide, rad-hard, resistive switching, total ionizing dose.

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Section: Introductionmentioning

confidence: 99%

Superior TID Hardness in TiN/HfO$_{2}$/TiN ReRAMs After Proton Radiation

Wang

Butcher

et al. 2012

IEEE Trans. Nucl. Sci.

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“…Tong et al reported experimental results indicating that on-and off-state resistances exhibited only minor changes after exposures to either Co -rays or 941-MeV Bi-ions [6]. For the -ray experiments, the on-state resistance of the devices showed virtually no change after irradiation, and the off-state resistance increased slightly from 22 k to 23 k after 45 Mrad(Si) of total ionizing dose.…”

Section: Impact Of Alpha Particles On the Electrical I Introductionmentioning

confidence: 99%

Impact of Alpha Particles on the Electrical Characteristics of TiO$_{2}$ Memristors

Barnaby

Malley

Land

et al. 2011

IEEE Trans. Nucl. Sci.

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Titanium-oxide (TiO 2 ) memristors exposed to 1-MeV alpha particles exhibit only minor changes in the electrical response for ion fluencies up to 10 14 cm 2 . At higher fluence levels, virgin and off-state devices exhibit measurable increases in current conduction between the two platinum (Pt) electrodes. Analysis, supported by radiation transport and numerical device simulations, suggests that radiation-induced displacement damage in the TiO 2 film increases the density of oxygen vacancies, thereby altering both resistivity in the bulk of the transition-metal oxide and the junction characteristics of Pt-TiO 2 interface. Nevertheless, the experimental results indicate continued switching functionality of the memristors even after exposure to 10 15 cm 2 alpha particles. The high intrinsic vacancy density in the devices prior to radiation exposure is identified as the primary feature contributing to apparent radiation hardness.

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“…Even with just a few hundreds of memristors, we were able to build a PPUF which will take several years for an attacker to simulate. Furthermore, the developed nano-PPUF is more robust to changes in temperature then CMOS devices [14] and is rad-hard as memristors characteristics are not affected by radiation [15].…”

Section: Discussionmentioning

confidence: 99%

Nano-PPUF: A Memristor-Based Security Primitive

Rajendran

Rose

Karri

et al. 2012

2012 IEEE Computer Society Annual Symposium on VLSI

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Abstract-CMOS devices have been used to build hardware security primitives such as physical unclonable functions. Since CMOS devices are relatively easy to model and simulate, CMOS-based security primitives are increasingly prone to modeling attacks. We propose memristor-based Public Physical Unclonable Functions (nano-PPUFs); they have complex models that are difficult to simulate. We leverage sneak path currents, process variations, and computationally intensive SPICE models as features to build the nano-PPUF. With just a few hundreds of memristors, we construct a time-bounded authentication protocol that will take several years for an attacker to compromise.

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Radiation Hardness of ${\rm TiO}_{2}$ Memristive Junctions

Cited by 66 publications

References 18 publications

Superior TID Hardness in TiN/HfO$_{2}$/TiN ReRAMs After Proton Radiation

Superior TID Hardness in TiN/HfO$_{2}$/TiN ReRAMs After Proton Radiation

Impact of Alpha Particles on the Electrical Characteristics of TiO$_{2}$ Memristors

Nano-PPUF: A Memristor-Based Security Primitive

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