Radiation hardness and abnormal photoresponse dynamics of the CH₃NH₃PbI₃ perovskite photodetector

Abstract

Schematic diagram of the perovskite photodetector under proton irradiation and the degradation mechanism of the functional layer after irradiation.

Sensitivity and Detection Limit of Spectroscopic‐Grade Perovskite CsPbBr3 Crystal for Hard X‐Ray Detection

“…Similar behavior has been previously observed in organic–inorganic hybrid perovskite photodetectors and attributed to irradiation‐induced defect formation. [ 40 ] Another possible reason may be related to the pile‐up effects leading to severe recombination of the photogenerated carriers due to their small mobilities as shown in Figure 3d.…”

Investigation of structural and optical properties of MAPbBr3monocrystals under fast electron irradiation

“…6 The presence of large Z-elements (Pb, I, Br, Cs) in the compositions of HP, high density (>3.8 g cm −3 ) 7 and large carrier drift lengths (the μτ products) 8 demonstrates the high potential of HP for use in radiation detectors. Promising results for radiation tolerance under X-rays 9 and proton fluence 10 have been demonstrated for solar cells with HP-based absorbers. Moreover, the hybrid nature of the chemical compositions with organic–inorganic cations (CH 3 NH 3 PbI 3 , etc. )…”

Extreme Radiation Resistance of Self‐Powered High‐Performance Cs0.04Rb0.04(FA0.65MA0.35)0.92Pb(I0.85Br0.14Cl0.01)3 Perovskite Photodiodes

“…It is noteworthy that conventional CH 3 NH 3 PbI 3 perovskite photodiodes exhibited a 60% drop in EQE after the same irradiation fluence of 150 keV protons under a steady low‐intensity beam. [ 19 ] This indicates that the photodiodes made of the high‐performance multicomponent Cs 0.04 Rb 0.04 (FA 0.65 MA 0.35 ) 0.92 Pb(I 0.85 Br 0.14 Cl 0.01 ) 3 perovskite material exhibit a higher radiation resistance even under intense short‐pulse proton irradiation (see Table S1, Supporting Information for more details). Optical properties of the perovskite, Spiro‐OMeTAD and SnO 2 functional layers remain unchanged under proton irradiation with the accumulated fluence up to 10 13 protons cm −2 .…”

“…This is due to the formation of shallow traps in the perovskite active layer, which possess a long recharge time . [ 15,16,19 ]…”

“…So far, only Xiong et al. [ 19 ] reported on radiation hardness of perovskite photodiodes based on conventional low‐stability methyl ammonium lead iodide CH 3 NH 3 PbI 3 perovskite active layers. [ 20–23 ] Moreover, there are no studies on the impact of pulsed proton irradiation, which is very important for simulating short‐term intense radiation damage originating from occasional flares on the Sun.…”