Radiation evaluation of commercial ferroelectric nonvolatile memories

Annealing Temperature and Ultraviolet Irradiation Effect on the Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films

“…The ultraviolet irradiation-induced loss in 2P r and 2E c are about 32% and 10%, respectively. The radiation-induced loss in the remnant polarization has also been observed in other samples, such as PZT ferroelectric capacitors, [15][16][17] and Bi 3 15 Nd 0 85 Ti 3 O 12 thin films. 18 The accepted explanation is the screening effects of the trapped charge carriers.…”

Total ionizing dose sensitivity of function blocks in FRAM

“…The ferroelectric materials have been reported to be able to withstand up to 10 Mrad(Si) [6], but the total dose failures of integrated FRAM devices have been reported at much lower dose levels [15][16][17][18]. The study on integrated ferroelectric/CMOS technology suggested that the embedded CMOS circuits have a huge impact on the overall radiation response of FRAMs [19], and some speculation about the sensitive parts of FRAM blocks have been made based on global irradiations [16,18], but detailed study on the TID induced damage to the FRAM-based circuits is still not available.…”

“…Over the years, the radiation induced damages to FRAMs including those associated with the single event effect (SEE) and total ionizing dose (TID) effect have been researched and reported [15][16][17][18][19][20][21]. Concerning the TID, previous studies have been conducted on issues including the retention degradation of ferroelectric materials [6,15], dose and dose rate dependence [16,17], temperature dependence [18], comparison of ferroelectric-embedded and CMOS-only circuits [19] and so on.…”

“…Concerning the TID, previous studies have been conducted on issues including the retention degradation of ferroelectric materials [6,15], dose and dose rate dependence [16,17], temperature dependence [18], comparison of ferroelectric-embedded and CMOS-only circuits [19] and so on. The ferroelectric materials have been reported to be able to withstand up to 10 Mrad(Si) [6], but the total dose failures of integrated FRAM devices have been reported at much lower dose levels [15][16][17][18].…”

Total dose radiation effects of Au/PbZr0.52Ti0.48O3/YBa2Cu3O7-δ/LaAIO3ferroelectric capacitors

“…radiation had been studied widely [1,2], and the results showed that the PZT capacitors had less sensitivity to neutron and pulsed radiation [3].…”