Radiation Damage Induced Dose Rate Non-Linearity in an N-Type Silicon Detector

Grusell, Erik; Rikner, Göran

doi:10.3109/02841868409136050

Cited by 44 publications

(30 citation statements)

References 10 publications

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“…This is because the diffusion length is reduced, hence the sensitive volume of the diode is reduced. 26 The effect of radiation damage on silicon diodes are also manifested in the dose per pulse dependence, [26][27][28][29] increased dark current and temperature dependence. [30][31][32] The effect of radiation damage on silicon diodes has been shown to decrease the diode sensitivity.…”

Section: Iia Radiation Damage Studiesmentioning

confidence: 99%

Characterization of a novel two dimensional diode array the “magic plate” as a radiation detector for radiation therapy treatment

et al. 2012

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Section: Iia Radiation Damage Studiesmentioning

confidence: 99%

Characterization of a novel two dimensional diode array the “magic plate” as a radiation detector for radiation therapy treatment

et al. 2012

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“…Cumulative radiation damage to the silicon reduces the sensitivity of these detectors, by displacing Si atoms from their lattice positions, creating defects that act as recombination centers and reduce the minority carrier diffusion distance. 1 When used for relative measurements, reduced sensitivity with accumulated dose does not lead to erroneous results.…”

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confidence: 98%

The effect of dose rate dependence ofp-type silicon detectors on linac relative dosimetry

Wilkins

Cygler

et al. 1997

Med. Phys.

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Cumulative radiation damage to silicon semiconductor diode detectors can induce dose rate dependent sensitivity, a concern in the pulsed beam of a linac. Two p-Si diode photon detectors were used in this study, diodes A and B. Both were preirradiated by the supplier to 5 kGy, with diode A receiving an estimated 8 kGy from measurements, and diode B, 25 kGy. At 6 MV, the PDD measured with diode B was lower (by 4.4% at a depth of 25 cm) than diode A. Using SSD to vary the dose per pulse from 0.02 to 0.64 mGy/pulse, diode A was dose rate independent (within 2%), while the sensitivity of diode B changed by 13%. Silicon diode detectors should be checked regularly against ionization chambers in the pulsed beam of a linac, especially older high-resistivity diodes that have accumulated dose from high-energy photon beams.

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“…8, 10,16,17). GRUSELL & RIKNER (7) showed why detectors based on n-type silicon, when radiation damaged, develop a sensitivity drop and a dose-rate non-linearity in pulsed radiation fields. With p-type detectors, the dose-rate non-linearity was eliminated and the radiation damage effect was limited to a moderate loss of sensitivity (14).…”

mentioning

confidence: 99%