1985
DOI: 10.3109/02841868509134367
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Selective Shielding of a p-Si Detector for Quality Independence

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Cited by 41 publications
(27 citation statements)
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“…This reduces the number of low-energy photons backscattered from the surrounding water which reach the detector, with the intention of making it less energy dependent. Rikner and Grusell 16 showed the addition of a small amount of tungsten behind the silicon reduced the overestimation of depth dose from 3% to 1% for a 20 cmϫ 20 cm 60 Co field. However, since the amount of scattered radiation is low in small fields, this additional shielding may not be useful under the conditions studied in this paper, and of course locates non-water equivalent material in close proximity to the sensitive volume of the detector.…”
Section: Iia1 Detectors Usedmentioning
confidence: 99%
“…This reduces the number of low-energy photons backscattered from the surrounding water which reach the detector, with the intention of making it less energy dependent. Rikner and Grusell 16 showed the addition of a small amount of tungsten behind the silicon reduced the overestimation of depth dose from 3% to 1% for a 20 cmϫ 20 cm 60 Co field. However, since the amount of scattered radiation is low in small fields, this additional shielding may not be useful under the conditions studied in this paper, and of course locates non-water equivalent material in close proximity to the sensitive volume of the detector.…”
Section: Iia1 Detectors Usedmentioning
confidence: 99%
“…The geometrical and material data are mainly based on the information in the paper by Rikner and Grusell. 21 While this paper was under review we have obtained more detailed data from the diode manufacturer, and the model shown in Fig. 2 more accurately represents what is being sold today.…”
Section: A Simulation Of a Si Diode Detectormentioning
confidence: 99%
“…In addition, diode detectors show directional dependency. 1 They also show an enhanced energy response to low-energy photons due to the preponderance of photoelectric interactions in silicon, 7,8 but in small SRS fields, where lateral electron equilibrium does not exist, the contribution of low energy photons is much less than extended fields. 3,5 TLD can, in general, be made smaller than the smallest active volume of an ion chamber.…”
Section: Introductionmentioning
confidence: 99%