Radiation Annealing of Boron-Implanted Silicon with a Halogen Lamp

Abstract

A new method to anneal implanted silicon wafers in a few seconds using a halogen lamp as a radiation source is proposed. Boron-implanted (200 keV, 1×1013 cm-2) silicon wafers were completely activated with little diffusion by radiation for 6 seconds. Conventional annealing for 15 minutes caused diffusion of boron. It was found that the activation of implanted boron was determined by the maximum temperature during annealing.

Formation of Ultra-Shallow Junctions

“…Ambient gas control was one of the most important developments that made RTP superior to the conventional furnace soak annealing technology. , Nishiyama et al (1980 used halogen lamps for annealing boron-implanted silicon samples for a short time of $6 s. Yet, temperature measurement and temperature uniformity issues severely limited the application of RTP to mainstream junction fabrication in industry. During the 1980s, formation of titanium silicide appeared as the first use of RTP in manufacturing.…”

PROPRIÉTÉS DES JONCTIONS p/n DANS LE SILICIUM OBTENUES PAR IMPLANTATION IONIQUE ET RECUIT RAPIDE

“…Pour rGduire la dur6e du sdjour 3 haute temperature et 6viter ces knconvgnients, diverses m6thodes de "recuit rapiden sont actuellement dtudides (r6f. [1][2][3][4][5][6]. Leur principe de base consiste h accdl6rer la croissance 6pitaxiale de la couche d4gradGe par implantation en portant celle-ci h trss haute tempsrature (21100°C) pendant un temps trss bref, au moyen d'une irradiation laser, d'un faisceau Qlectronique ou tout autre forme d16nergie.…”

Characterization of Ion-Implanted Si Rapidly Annealed with Incoherent Light

“…Rapid Thermal Annealing (RTA) involves heating cycles of 0.1 to 100 sec, longer than the :Z10-3 sec irradiation times characteristic of beam processing, but still short compared to the typical 30 min furnace annealing. Rapid annealing has been implemented with incoherent light irradiation [5,61, with shuttered graphite heaters [71, and with multiple scanned electron beams [8]. All these methods preserve the main advantage of beam annealing, i.e., greatly minimized dopant diffusion.…”