Characterization of Ion-Implanted Si Rapidly Annealed with Incoherent Light

Abstract

Irradiation of Si wafers for 5 to 10 sec with high intensity tungsten halogen lamps produces complete recovery of the displacement damage resulting from ion implantation. Data for two different thermal cycles are presented, with As and B implant doses ranging from 1013 to 1016 ions cm-2 . Sheet resistance measurements combined with Rutherford backscattering indicate full electrical activation of dopants with very little diffusion. Carrier lifetimes measured by a photoconductive method and by diode reverse recovery compare favorably with furnace annealing data, and capacitance transient spectroscopy reveals a low density of defects in the junction depletion region. These results combined with the inherent advantages of low cost and high efficiency make Rapid Thermal Annealing ideally suited for VLSI device fabrication.

Versatile diffusion system for novel device structures

“…Substantial interest has recently been shown in rapid thermal processing (RTP) as a technique to improve the characteristics of semiconductor devices. Applications reported to date include a reduction in junction depth [1,2], an improvement in junction defect density [3] and very thin gate oxide growth [4].…”