Quinhydrone/Methanol Treatment for the Measurement of Carrier Lifetime in Silicon Substrates

Takato, Hidetaka; Sakata, Isao; Shimokawa, Ryuichi

doi:10.1143/jjap.41.l870

Cited by 64 publications

(51 citation statements)

References 2 publications

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“…This stability agrees with microwave photoconductivity measurements, which show that the HQ-alcohol modification provides passivation, close to that provided by H-termination, but is much more stable in ambient. 21,32 The dipole values remain stable in ambient for several hours, after which they start to decrease slowly, decreasing by some 200 meV after 5 days in ambient atmosphere. Fig.…”

Section: -4mentioning

confidence: 99%

“…20 We modified the wet chemical hydroquinone-methanol (HQ-MeOH) passivation treatment for Si(100) that was reported to yield recombination velocities as low as 4.2 cm/s (measured for Float Zone, FZ, p-Si 150 cm). 21,22 This procedure that results in a primarily methoxy-terminated surface, 23 has many advantages over other reported molecular modifications of Si that require either high temperatures, 24 UV activation, ultra-high vacuum conditions, 25 or use of a Grignard reagent, 26 all of which are more complicated and less practical. Furthermore, by using alkyl alcohols of different lengths as solvent rather than just methanol we tune the Si electron affinity and can measure the S parameter without changing the top metal electrode.…”

Section: -3mentioning

confidence: 99%

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Ambient organic molecular passivation of Si yields near-ideal, Schottky-Mott limited, junctions

et al. 2012

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We report near-perfect transfer of the electrical properties of oxide-free Si surface, modified by a molecular monolayer, to the interface of a junction made with that modified Si surface. Such behavior is highly unusual for a covalent, narrow bandgap semiconductor, such as Si. Short, ambient atmosphere, room temperature treatment of oxide-free Si(100) in hydroquinone (HQ)/alkyl alcohol solutions, fully passivates the Si surface, while allowing controlled change of the resulting surface potential. The junctions formed, upon contacting such surfaces with Hg, a metal that does not chemically interact with Si, follow the Schottky-Mott model for metal-semiconductor junctions closer than ever for Si-based junctions. Two examples of such ideal behavior are demonstrated: a) Tuning the molecular surface dipole over 400 mV, with only negligible band bending, by changing the alkyl chain length. Because of the excellent passivation this yields junctions with Hg with barrier heights that follow the change in the Si effective electron affinity nearly ideally. b) HQ/ methanol passivation of Si is accompanied by a large surface dipole, which suffices, as interface dipole, to drive the Si into strong inversion as shown experimentally via its photovoltaic effect. With only ∼0.3 nm molecular interlayer between the metal and the Si, our results proves that it is passivation and prevention of metal-semiconductor interactions that allow ideal metal-semiconductor junction behavior, rather than an insulating transport barrier.

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Section: -4mentioning

confidence: 99%

Section: -3mentioning

confidence: 99%

Ambient organic molecular passivation of Si yields near-ideal, Schottky-Mott limited, junctions

et al. 2012

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“…Capture time of PL measurements was 5 s. Passivation with a quinhydrone methanol solution in a plastic bag was performed for the PL measurement. 17 Scanning electron microscopy (SEM) combined with energy dispersive X-ray (EDX) spectroscopy was used to detect carbon concentration on top of the ingot.…”

Section: Methodsmentioning

confidence: 99%

Relationship between dislocation density and contact angle of dendrite crystals in practical size silicon ingot

Takahashi

Joonwichien

Matsushima

et al. 2015

Journal of Applied Physics

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We suggested the possibility to suppress dislocation generation by controlling the microstructure of dendrite crystals in practical size Si wafers grown by the floating cast method. With the floating cast method, the contact angle between adjacent dendrite crystals can be used as a structural parameter to define grain boundaries (GBs). We fabricated a practical size silicon ingot fully covered with dendrite crystals and investigated dislocation density near the GBs as a function of the contact angle. The dislocation density was found to decrease with decreasing contact angle. This result can be explained by differences in shear stress on {111} slip surface around the GBs, as supported by numerical calculations considering various structural parameters in multicrystalline Si. These results confirm our previous results with laboratory-scale ingots, and we believe this concept can be applied to commercial growth processes.

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“…Measurements of t were performed by a m-PCD method using a WT-85 lifetime scanner (SEMILAB) [7,11,12]. A pulsed laser diode with a wavelength of 904 nm and a pulse width of 200 ns was used.…”

Section: Methodsmentioning

confidence: 99%

Ambient stability of wet chemically passivated germanium wafer for crystalline solar cells

Swain

Takato

Liu

et al. 2011

Solar Energy Materials and Solar Cells

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Quinhydrone/Methanol Treatment for the Measurement of Carrier Lifetime in Silicon Substrates

Cited by 64 publications

References 2 publications

Ambient organic molecular passivation of Si yields near-ideal, Schottky-Mott limited, junctions

Ambient organic molecular passivation of Si yields near-ideal, Schottky-Mott limited, junctions

Relationship between dislocation density and contact angle of dendrite crystals in practical size silicon ingot

Ambient stability of wet chemically passivated germanium wafer for crystalline solar cells

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