We report on measurement of dielectric constant, mid-gap defect density, Urbach energy of tail states in CH 3 NH 3 PbI x Cl 1Àx perovskite solar cells. Midgap defect densities were estimated by measuring capacitance vs. frequency at different temperatures and show two peaks, one at 0.66 eV below the conduction band and one at 0.24 eV below the conduction band. The attempt to escape frequency is in the range of 2 Â 10 11 /s. Quantum efficiency data indicate a bandgap of 1.58 eV.
We report near-perfect transfer of the electrical properties of oxide-free Si surface, modified by a molecular monolayer, to the interface of a junction made with that modified Si surface. Such behavior is highly unusual for a covalent, narrow bandgap semiconductor, such as Si. Short, ambient atmosphere, room temperature treatment of oxide-free Si(100) in hydroquinone (HQ)/alkyl alcohol solutions, fully passivates the Si surface, while allowing controlled change of the resulting surface potential. The junctions formed, upon contacting such surfaces with Hg, a metal that does not chemically interact with Si, follow the Schottky-Mott model for metal-semiconductor junctions closer than ever for Si-based junctions. Two examples of such ideal behavior are demonstrated: a) Tuning the molecular surface dipole over 400 mV, with only negligible band bending, by changing the alkyl chain length. Because of the excellent passivation this yields junctions with Hg with barrier heights that follow the change in the Si effective electron affinity nearly ideally. b) HQ/ methanol passivation of Si is accompanied by a large surface dipole, which suffices, as interface dipole, to drive the Si into strong inversion as shown experimentally via its photovoltaic effect. With only ∼0.3 nm molecular interlayer between the metal and the Si, our results proves that it is passivation and prevention of metal-semiconductor interactions that allow ideal metal-semiconductor junction behavior, rather than an insulating transport barrier.
Lead-trihalide perovskite solar cells are an important photovoltaic technology. We investigate the effect of light induced degradation on perovskite solar cells. During exposure, the open-circuit voltage (Voc) of the device increases, whereas the short-circuit current (Isc) shows a decrease. The degradation can be completely recovered using thermal annealing in dark. We develop a model based on light induced generation of ions and migration of these ions inside the material to explain the changes in Isc, Voc, capacitance and dark current upon light exposure and post-exposure recovery. There was no change in defect density in the material upon exposure.
Poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl) carbonyl]thieno[3,4-b]thiophenediyl]] (PTB7) is an important material for solar cells. We report on measurement of bulk and interfacial defects in PTB7 devices and measurement of Urbach energies of tail states near the HOMO and LUMO levels. The bulk defects and Urbach energies were measured using sub-gap quantum efficiency techniques and the donor/acceptor interfacial defects using capacitance techniques. Interfacial defects were found to peak at ∼0.7 eV above the HOMO level. Dark current-voltage curve indicated both interfacial and bulk recombination. Urbach energy for tail states near the HOMO level of PTB7 is 33 meV and near the LUMO level 55 meV.
We report the formation of CH3NH3PbI3 from more soluble, non-iodide lead salts like Pb(SCN)2 and Pb(NO3)2. When exposed to CH3NH3I vapours, the colourless lead salts turned yellow before the formation of the black perovskite. Investigation of this yellow intermediate suggests that anion exchange (converting lead salts to PbI2) precedes the perovskite formation. PCEs of 7.6% and 8.4% were achieved for the devices formed from Pb(SCN)2 and Pb(NO3)2, respectively.
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