Quaternary InGaAsSb Thermophotovoltaic Diodes

Dashiell, M. W.; Beausang, John F.; Ehsani, H.; Nichols, G.; DePoy, D.M.; Danielson, L. R.; Talamo, P.; Rahner, K; Brown, E.; Burger, Sven; Fourspring, Patrick M.; Topper, W.F.; Baldasaro, P.F.; Wang, C.A.; Huang, R.K.; Connors, M.K.; Turner, G. W.; Shellenbarger, Z.A.; Taylor, G.; Li, Jizhong; Martinelli, Ramon U.; Donetski, Dmitri; Аникеев, С. Г.; Belenky, Gregory; Luryi, Serge

doi:10.1109/ted.2006.885087

Cited by 130 publications

(55 citation statements)

References 31 publications

(53 reference statements)

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“…In particular, we explore Si/SiO2/Pt structures. We show experimentally that these structures exhibit a selective emission spectrum suitable for TPV applications, comparable with state-of-the-art full metallic structures, and that they are thermally stable at temperatures up to 1100 K. These structures are well suited for TPV systems in combination with III-V semiconductors in the range Eg=0.4-0.55 eV such as InAsSbP [15,16] (Eg=0.3-0.55 eV) and InGaAsSb [17,18,19] (Eg=0.5-0.6 eV).…”

Section: Introductionmentioning

confidence: 95%

Three-dimensional metallo-dielectric selective thermal emitters with high-temperature stability for thermophotovoltaic applications

Garín

Hernández

Trifonov

et al. 2015

Solar Energy Materials and Solar Cells

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Selective thermal emitters concentrate most of their spontaneous emission in a spectral band much narrower than a blackbody. When used in a thermophovoltaic energy conversion system, they become key elements defining both its overall system efficiency and output power. Selective emitters' radiation spectra must be designed to match their accompanying photocell's band gap and, simultaneously, withstand high temperatures (above 1000 K) for long operation times. The advent of nanophotonics has allowed the engineering of very selective emitters and absorbers; however, thermal stability remains a challenge since 1 of 22 nanostructures become unstable at temperatures much below the melting point of the used materials. In this paper we explore an hybrid 3D dielectric-metallic structure that combines the higher thermal stability of a monocrystalline 3D Silicon scaffold with the optical properties of a thin Platinum film conformally deposited on top. We show experimentally that these structures exhibit a selective emission spectrum suitable for TPV applications and that they are thermally stable at temperatures up to 1100 K. These structures are ideal in combination with III-V semiconductors in the range Eg=0.4-0.55 eV such as InGaAsSb (Eg=0.5-0.6 eV) and InAsSbP (Eg=0.3-0.55 eV).

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Section: Introductionmentioning

confidence: 95%

Three-dimensional metallo-dielectric selective thermal emitters with high-temperature stability for thermophotovoltaic applications

Garín

Hernández

Trifonov

et al. 2015

Solar Energy Materials and Solar Cells

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“…7 First, an efficient small bandgap PV cell is needed to convert a large spectral range of the thermal emission into electrical power. TPV cells with a bandgap at 0.68 eV (1.8 µm) for GaSb, 8 0.62 eV (2.0 µm) for InGaAs, 9 and 0.54 eV (2.3 µm) for quaternary InGaAsSb cells, 10 are especially suitable. Second, high operating temperatures are more suitable to shift the peak of the thermal emission into the spectral range of the PV cell, preferably more than 1000…”

Section: Introductionmentioning

confidence: 99%

Performance of tantalum-tungsten alloy selective emitters in thermophotovoltaic systems

et al. 2014

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A tantalum tungsten solid solution alloy, Ta 3% W, based 2D photonic crystal (PhC) was designed and fabricated for high-temperature energy conversion applications. Ta 3% W presents advantages compared to the non-alloys as it combines the better high-temperature thermomechanical properties of W with the more compliant material properties of Ta, allowing for a direct system integration path of the PhC as selective emitter/absorber into a spectrum of energy conversion systems. Indeed metallic PhCs are promising as high performance selective thermal emitters for thermophotovoltaics (TPV), solar thermal, and solar TPV applications due to the ability to tune their spectral properties and achieve highly selective emission. A 2D PhC was designed to have high spectral selectivity matched to the bandgap of a TPV cell using numerical simulations and fabricated using standard semiconductor processes. The emittance of the Ta 3% W PhC was obtained from near-normal reflectance measurements at room temperature before and after annealing at 1200• C for 24h in vacuum with a protective coating of 40 nm HfO 2 , showing high selectivity in agreement with simulations. SEM images of the cross section of the PhC prepared by FIB confirm the structural stability of the PhC after anneal, i.e. the coating effectively prevented structural degradation due to surface diffusion. The mechanical and thermal stability of the substrate was characterized as well as the optical properties of the fabricated PhC. To evaluate the performance of the selective emitters, the spectral selectivity and useful emitted power density are calculated as a function of operating temperature. At 1200• C, the useful emitted irradiance is selectively increased by a factor of 3 using the selective emitter as compared to the non-structured surface. All in all, this paper demonstrates the suitability of 2D PhCs fabricated on polycrystalline Ta-W substrates with an HfO 2 coating for TPV applications.

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“…We comment briefly on previous far-field TPV designs which have utilized Gallium Antimonide [46,47] as the photovoltaic cell for converting the thermal radiation into electric power [48]. Our analysis shows that the optimum cell design for near-field TPV is fundamentally different and the presence of van Hove Singularities in the material comprising the cell is critical for the spectrally selective nature of the transferred energy.…”

Section: Discussionmentioning

confidence: 99%

Ideal near-field thermophotovoltaic cells

Molesky

Jacob

2015

Phys. Rev. B

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We ask the question, what are the ideal characteristics of a near-field thermophotovoltaic cell? Our search leads us to a reformulation of near-field radiative heat transfer in terms of the joint density of electronic states of the emitter-absorber pair in the thermophotovoltaic system. This form reveals that semiconducting materials with narrowband absorption spectra are critical to the energy conversion efficiency. This essential feature is unavailable in conventional bulk semiconductor cells but can be obtained using low dimensional materials. Our results show that the presence of matched van Hove singularities resulting from quantum-confinement in the emitter and absorber of a thermophotovoltaic cell boosts both the magnitude and spectral selectivity of radiative heat transfer; dramatically improving energy conversion efficiency. We provide a model near-field thermophotovoltaic system design making use of this idea by employing the van Hove singularities present in carbon nanotubes. Shockley-Queisser analysis shows that the predicted heat transfer characteristics of this model device are fundamentally better than existing thermophotovoltaic designs. Our work paves the way for the use of quantum dots, quantum wells, two-dimensional semiconductors, semiconductor nanowires and carbon nanotubes as future materials for thermophotovoltaic cells.

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Quaternary InGaAsSb Thermophotovoltaic Diodes

Abstract: Abstract-In

Cited by 130 publications

References 31 publications

Three-dimensional metallo-dielectric selective thermal emitters with high-temperature stability for thermophotovoltaic applications

Three-dimensional metallo-dielectric selective thermal emitters with high-temperature stability for thermophotovoltaic applications

Performance of tantalum-tungsten alloy selective emitters in thermophotovoltaic systems

Ideal near-field thermophotovoltaic cells

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