Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors with very high transconductance

Structural and optical properties of strain-relaxed InAsP/InP heterostructures grown by metalorganic vapor phase epitaxy on InP(001) using tertiarybutylarsine

“…8,9 In addition, the heterojunction band offsets at strained-layer interfaces have been used to modify the charge confinement and transport in modulation-doped field-effect transistors ͑MODFET͒ 10 and heterojunction bipolar transistors. 11 Finally, the transport properties are significantly modified by the splitting of the light-and heavy-hole valence bands which permits higher mobility MODFET 12 and reduced threshold-current graded-index separateconfinement heterostructure ͑GRINSCH͒ laser diodes. 13 Thus, a detailed understanding of the effect of strain on the a͒ Electronic mail: desjardins@lisa.polymtl.ca b͒ energy levels of InAsP/InP heterostructures, especially the band gap and the band offsets, is required to design highperformance devices.…”

Strained-Layer Electronics and Optoelectronics

“…Since, as described above, the electro_ effective mass at the Fermi level was not significantly enhanced by strain, the improvement of n-channel MODFET performance derives mainly from the dislocation-free application of narrower-bandgap materials for MODFET channels, a trend which continues m the use of higher-perfonnance, higher Inmole-fraction (In,Ga)As strained-layers over InP substrates [15]. In contrast, strain-tailoring has found direct application to p-channel FETs for III-V complementary logic [16], where impressive device performance (1-mm gatelength FETs with transconductance exceeding 170 mS/mm) has been attributed to light-hole transport in the strained-layer.…”

An anisotype GaAs/In/sub x/Ga/sub 1-x/As heterojunction field-effect transistor for digital logic applications

“…Drummond [2] have demonstrated the advantages of the pseudomorphic channel, while others at Sandia [3] and Honeywell [4] have fabricated high-transconductance p-channe1 devices. The more recent results of Nguyen et al [5] showed a cutoff frequency of 120 GHz for modulation-doped AlGaAdInGaAs FET's with submicrometer gate lengths.…”

“…The p-n heterojunction would thus include the advantages of a higher built-in potential (lower gate leakage current), a higher mobility channel, carrier confinement, and no Fermi-level pinning at 0741-3106/90/0100-0030$01 .OO 0 1990 IEEE the junction. Since light-hole conduction is favored along the channel direction in compressively strained InGaAs [3], realization of even lower power complementary logic circuits is possible with this structure. Furthermore, the precise control of epilayer thickness, doping level, and alloy composition of the MBE technique is advantageous over direct ion implantation into liquid-encapsulated-Czochralski (LEC) semi-insulating (SI) GaAs substrates, where device performance has been shown to be critically dependent on substrate quality (see, for example, [lo]).…”