Structural and optical properties of strain-relaxed InAsP/InP heterostructures grown by metalorganic vapor phase epitaxy on InP(001) using tertiarybutylarsine

Abstract

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Band parameters for III–V compound semiconductors and their alloys

“…779 A somewhat smaller offset of 0.27 eV was reported on the basis of optical data. 812 Similar offsets were deduced from InAsP/InP quantum well measurements, 573,[813][814][815][816] although a considerably larger VBO was found in one study. 817 An unstrained VBO of 0.39 eV was determined from PL measurements by Disseix et al, 818 Assuming transitivity, the discussion above implies that the VBO for the unstrained GaAs/InP heterojunction should be 0.14 eV, which is roughly consistent with the result of x-ray photoemission spectroscopy ͑0.19 eV͒.…”

Optical absorption and determination of band offset in strain-balanced GaInP/InAsP multiple quantum wells grown by low-pressure metalorganic vapour phase epitaxy

“…The peaks labelled e1-hh1 and e1-lh1 correspond to the transition between the n = 1 heavyhole and light-hole levels respectively and the n = 1 electronic level, and the e2-hh2 peak corresponds to the transition between the n = 2 heavy-hole level and the n = 2 electronic level. The model accurately predicts all three peaks, with the best fit obtained for δE c = 94.0 ± 3.3 meV which corresponds to approximately 75±3% of the difference between the strained bandgaps and is consistent with the band offsets deduced for InAsP/InP heterojuctions [18,19]. The excitonic binding energies deduced from the fit are 10 meV and 8 meV for the heavy-and lighthole excitons respectively, consistent with results for InAsP layers with small As content [18].…”

“…Thus, the strained conduction band offset is the only adjustable parameter †. For a detailed description of the calculations see [18,19]. We reproduce in table 1 the relevant set of semiconductor parameter values used at 300 K. The bandgap bowing parameter is c = 0.12 eV for InAsP (see [18]) and c = 0.88 eV for GaInP (see [22]).…”

“…† This is not strictly true, as there may always be some discrepancy between the different values of the materials parameters quoted in the literature, which are obtained by different measurements. Our extensive previous work on InAsP[18,19] and GaInP[20,21], however, gives us enough confidence in the values used so that, in fact, the only parameter that we had to adjust in this work is the band offset.…”