An anisotype GaAs/In/sub x/Ga/sub 1-x/As heterojunction field-effect transistor for digital logic applications

Abstract

An anisotype heterojunction field-effect transistor (A-HJFET) is proposed for GaAs digital integrated circuit applications. A thin, highly doped, strained InxGa,-,As (x s 0.2) n-channel is employed for improved transconductance while a p+-GaAs cap is used to enhance the dynamic gate voltage range of the device. Prototype devices with 5-pm gate lengths show maximum transconductance of 80 mS/mm at V , = 2 V and forward gate bias voltage of up to + 2 V without significant leakage current.