A lattice-matched δ-doped In0.34Al0.66As0.85Sb0.15/InP heterostructure field-effect transistor (HFET) which provides large band gap (∼1.8 eV), high Schottky barrier height (φB>0.73 eV), and large conduction-band discontinuity (ΔEc>0.7 eV) has been proposed. In0.34Al0.66As0.85Sb0.15/InP heterostructures are shown to be type II heterojunctions with the staggered band lineup. This HFET demonstrates a output conductance of less than 1 mS/mm. Two-terminal gate-source breakdown voltage is more than 20 V with a leakage current as low as 170 μA at room temperature. High three-terminal off-state breakdown voltage as high as 36 V, and three-terminal on-state breakdown voltage as high as 18.6 V are achieved. The gate voltage swing is also significantly improved.
Articles you may be interested inHigh breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors J. Vac. Sci. Technol. B 32, 051204 (2014); 10.1116/1.4891966High-performance, low-noise enhancement-mode pseudomorphic high-electron-mobility transistor with gate recession by citric acid/hydrogen peroxide selective etching A high-breakdown ␦-doped In 0.49 Ga 0.51 P/InGaAs/AlGaAs high-electron-mobility transistor ͑HEMT͒ grown by low-pressure metalorganic chemical vapor deposition has been fabricated and demonstrated successfully. By using a wet etching gate process, we obtained depletion-and enhancement-mode HEMTs. The fabricated devices (1.5ϫ125 m 2 ) show that the measured maximum drain saturation current density and extrinsic transconductance are 215 mA/mm and 82 mS/mm for depletion-mode and are 100 mA/mm and 75 mS/mm for enhancement-mode devices, respectively. The gate-to-drain breakdown voltage for both types is over 40 V. The high-breakdown voltage is attributed to the use of an In 0.49 Ga 0.51 P Schottky layer, ␦-doping, and GaAs subspacer layer.
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