Quantum well intermixing with high spatial selectivity using a pulsed laser technique

McLean, C.J.; McKee, Andrew; Lullo, G.; Bryce, A.C.; Rue, R.M. De La; Marsh, J.H.

doi:10.1049/el:19950868

Cited by 30 publications

(16 citation statements)

References 6 publications

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“…Starting with impurity-induced layer disordering [1], a variety of methods, such as vacancy-enhanced disordering (VED) [2], ion-implantation-induced intermixing [3], and laser-assisted disordering [4] have been investigated in many laboratories. While the former is probably the most popular, and has already lead to several commercial products, most of the other techniques are not yet employed in large-scale optoelectronic device manufacturing.…”

Section: Introductionmentioning

confidence: 99%

Quantum-well intermixing for fabrication of lasers and photonic integrated circuits

Hofstetter

Maisenholder

Zappe

1998

IEEE J. Select. Topics Quantum Electron.

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Abstract-Various applications of quantum-well intermixing, ranging from multiwavelength lasers to complex photonic integrated circuits, are described. The fabrication of these GaAs-AlGaAs-based devices relies on the postgrowth definition of regions with varying bandgap, enabling the manufacture of wavelength shifted modulators and lasers, as well as the integration of transparent waveguides with absorbing lasers and detectors. The impurity-free vacancy-enhanced disordering technique employed, and its integration with existing process technologies, will be presented, and examples of multicolor lasers, wavelength shifted modulators and integrated optical interferometers are shown. These applications yield high-optical functionality using relatively simple process and integration technology.Index Terms-Interferometers, monolithic integration, multiwavelength lasers, photonic integrated circuits, quantum-well intermixing.

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Section: Introductionmentioning

confidence: 99%

Quantum-well intermixing for fabrication of lasers and photonic integrated circuits

Hofstetter

Maisenholder

Zappe

1998

IEEE J. Select. Topics Quantum Electron.

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“…The penetration depth of 337 nm radiation in InP is about 100 nm, which is an important depth-scale in semiconductor technology [1]. The laser beam was homogenized by passing it through a 1 m long multimode step index optical fiber (ThorLabs, P/N: BFH22-550).…”

Section: Methodsmentioning

confidence: 99%

“…Interest in the fundamental properties of light-matter interactions and their technological applications continues to stimulate studies of laser irradiation effects on semiconductor surfaces [1]. Irradiation of GaAs and InP crystal surfaces with femtosecond infrared (780 nm) laser pulses with Gaussian intensity distributions at various fluences provided information about changes in surface morphology, physical and chemical characteristics of the surface in the processed crater [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Evolution of InP surfaces under low fluence pulsed UV irradiation

Musaev

Kwon

Wróbel

et al. 2008

Applied Surface Science

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“…In this paper, we repot the fabrication of high spatial selectivity, multiple bandgap laser chip in InGaAs-InGaAsP heterostructures using pulsed photoabsorption-induced disordering (PPAID) [1]. This process has been successfully developed in InGaAs-InGaAsP material systems [2], as well as in GaAs-AlGaAs quantum well (QW) structures [3].…”

Section: Introductionmentioning

confidence: 99%

Direct writing of multiple-wavelength chip in InGaAs-InGaAsP structure using pulsed laser irradiation

2004

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In this paper, we report a simple laser direct writing method using pulsed photoabsorption-induced disordering (PPAID) to create high spatial bandgap selectivity and high processed material quality multiple-wavelength chip in InGaAsInGaAsP heterostructures. Using this intermixing technology, we have achieved a spatial bandgap selectively of better than 2.5µm from a two-section InGaAs-InGaAsP chip with differential wavelength shift of over 120 nm. A theoretical model has been developed to estimate the limit spatial resolution of the PPAID process. Theoretical analysis has also been performed to investigate the relationship between the irradiation conditions and the bandgap shift. Devices such as bandgap tuned lasers, integrated extended cavity lasers, and multiple-wavelength laser chip have also been fabricated and characterized to verify the integration capability of this postgrowth bandgap engineering technique. The quality of the devices fabricated from the intermixed materials was found to be high, indicating that PPAID is a promising process for the fabrication of photonic integrated circuits.

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Quantum well intermixing with high spatial selectivity using a pulsed laser technique

Cited by 30 publications

References 6 publications

Quantum-well intermixing for fabrication of lasers and photonic integrated circuits

Quantum-well intermixing for fabrication of lasers and photonic integrated circuits

Evolution of InP surfaces under low fluence pulsed UV irradiation

Direct writing of multiple-wavelength chip in InGaAs-InGaAsP structure using pulsed laser irradiation

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