Quantum transport at high pressures

WTe2, a type-II Weyl semimetal, has recently attracted much attention due to its unique band structure leading to extremely large magnetoresistance and exceedingly high mobility. In this report, we discuss the signature of Lifshitz transition in WTe2.08 nanosheets through electrical transport measurements. We observed a resistivity anomaly (at T = T*) in the resistivity ( ρxx) vs temperature (T) curve, which shows significant thickness dependence. The Hall resistance evolves from non-linear to linear with a decrease in thickness. Combining both zero-field resistivity and Hall measurements, we provide evidence substantiating the resistivity anomaly as a direct manifestation of Lifshitz transition.

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Signature of Lifshitz transition in WTe2.08 nanosheets detected through electrical transport measurements

Majhi

Kakani

Ganesan

et al. 2022

Applied Physics Letters

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2007

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Balykin¹

2007

PHYS-USP

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In this paper, a uniformly distributed wide-band metal-oxide-semiconductor field-effect transistor (MOSFET) model constructed by several same unit cells in parallel is presented. The kink phenomenon of scattering parameter S 11 due to the distributed gate-resistance of MOSFETs can be fitted well by this model. Good agreement between the measured and modeled results of scattering parameters S 22 , current gain H 21 , and unilateral gain U are also demonstrated. In addition, the impact of distributed gate-resistance on cut-off frequency ( f T ) and maximum oscillation frequency ( f max ) performances of single gatefinger MOSFETs with large gate-width of 20, 40, 80, 120, and 160 mm are quantitatively characterized and analyzed.

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Quantum transport at high pressures

Cited by 3 publications

References 18 publications

Signature of Lifshitz transition in WTe2.08 nanosheets detected through electrical transport measurements

Signature of Lifshitz transition in WTe2.08 nanosheets detected through electrical transport measurements

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