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Koshelev, K. N.; Banine, VY Vadim; Салащенко, Н. Н.

doi:10.1070/pu2007v050n07abeh006321

Cited by 7 publications

(1 citation statement)

References 14 publications

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“…Now the only practical source of extreme ultra-violet (XUV) radiation for high resolution projection lithography is line radiation of multiply charged ions of certain elements such as stannum or xenon [1]. Encouraging experiments on a development of a point-like UV radiation source have been performed at IAP [2].…”

Section: Introductionmentioning

confidence: 99%

Formation of UV-radiating strongly non-equilibrium plasma with multiply charged ions in the expanding high-pressure gas jet

Shalashov¹,

Golubev²,

Abramov³

et al. 2016

AIP Conference Proceedings

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Abstract. In the present paper we target the physics of transition from subsonic to supersonic regimes in the expanding plasma flow. Originated form ECR ion sources, this problem is generalized to describe the stationary highly-localized plasma discharge formed under resonant microwave heating in a gas jet freely expanding after a high-pressure nozzle. The peculiar feature of such a discharge is formation of a strongly non-equilibrium plasma flow with multiply charged ions and the electron temperature much greater than the temperature of ions. We study possibilities for conjugating the slow movement of initially neutral dense gas and the supersonic flow of accelerated plasma, or, equivalently, a smooth transition from ion-acoustic barrier in the expanding flow with a varying charge state distribution. The proposed model is used to understand and optimize the recent experiments performed at IAP, Nizhny Novgorod, and aimed at demonstration of a new possibility of development of a point source of extreme ultraviolet radiation for the projective lithography. In these experiments, a line emission of multiply charged ions of noble gases has been investigated in the non-equilibrium discharge supported by high-power sub-millimeter waves in the expanding gas flow.

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Section: Introductionmentioning

confidence: 99%

Formation of UV-radiating strongly non-equilibrium plasma with multiply charged ions in the expanding high-pressure gas jet

Shalashov¹,

Golubev²,

Abramov³

et al. 2016

AIP Conference Proceedings

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Conversion efficiency of a laser-plasma source based on a Xe jet in the vicinity of a wavelength of 11 nm

et al. 2018

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We optimized the parameters of a laser-produced plasma source based on a solid-state Nd: YAG laser (λ = 1.06 nm, pulse duration 4 ns, energy per pulse up to 500 mJ, repetition rate 10 Hz, lens focus distance 45 mm, maximum power density of laser radiation in focus 9 × 1011 W/cm2) and a double-stream Xe/He gas jet to obtain a maximum of radiation intensity around 11 nm wavelength. It was shown that the key factor determining the ionization composition of the plasma is the jet density. With the decreased density, the ionization composition shifts toward a smaller degree of ionization, which leads to an increase in emission peak intensity around 11 nm. We attribute the dominant spectral feature centred near 11 nm originating from an unidentified 4d-4f transition array in Xe+10…+13 ions. The exact position of the peak and the bandwidth of the emission line were determined. We measured the dependence of the conversion efficiency of laser energy into an EUV in-band energy with a peak at 10.82 nm from the xenon pressure and the distance between the nozzle and the laser focus. The maximum conversion efficiency (CE) into the spectral band of 10–12 nm measured at a distance between the nozzle and the laser beam focus of 0.5 mm was CE = 4.25 ± 0.30%. The conversion efficiencies of the source in-bands of 5 and 12 mirror systems at two wavelengths of 10.8 and 11.2 nm have been evaluated; these efficiencies may be interesting for beyond extreme ultraviolet lithography.

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Balykin¹

2007

PHYS-USP

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In this paper, a uniformly distributed wide-band metal-oxide-semiconductor field-effect transistor (MOSFET) model constructed by several same unit cells in parallel is presented. The kink phenomenon of scattering parameter S 11 due to the distributed gate-resistance of MOSFETs can be fitted well by this model. Good agreement between the measured and modeled results of scattering parameters S 22 , current gain H 21 , and unilateral gain U are also demonstrated. In addition, the impact of distributed gate-resistance on cut-off frequency ( f T ) and maximum oscillation frequency ( f max ) performances of single gatefinger MOSFETs with large gate-width of 20, 40, 80, 120, and 160 mm are quantitatively characterized and analyzed.

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Cited by 7 publications

References 14 publications

Formation of UV-radiating strongly non-equilibrium plasma with multiply charged ions in the expanding high-pressure gas jet

Formation of UV-radiating strongly non-equilibrium plasma with multiply charged ions in the expanding high-pressure gas jet

Conversion efficiency of a laser-plasma source based on a Xe jet in the vicinity of a wavelength of 11 nm

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