Quantum size-dependent luminescence and nonlinear optical properties of silicon quantum dots/SiO2 multilayer

Zhang, Pei; Li, Shaojun; Li, Dongke; Ren, Linjiao; Qin, Zirui; Jiang, Liying; Xu, Jun

doi:10.1016/j.optlastec.2022.108706

Cited by 6 publications

(3 citation statements)

References 47 publications

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“…Raman spectra of the flexible P-doped nc-SiC x :H thin films prepared at different R H are presented in figure 2(a). A broad Gauss-shaped peak centering at ∼480 cm −1 and a sharp Lorentz-shaped peak centering at ∼520 cm −1 are observed for all the samples, respectively corresponding to the transverse optical phonon mode of a-Si:H and the longitudinal optical phonon mode denoting the component of crystalline Si [16][17][18]. On the basis of the existence of C-Si peak, it can be deduced that crystallization takes place for all the samples by applying H 2 /Ar mixed dilution.…”

Section: Resultsmentioning

confidence: 90%

Fabrication of highly conductive phosphorous-doped nc-SiCx:H thin film on PET

Liu,

Sun,

Tang

et al. 2024

Phys. Scr.

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Plasma enhanced chemical vapor deposition (PECVD) method has been utilized to fabricate phosphorous-doped hydrogenated nanocrystalline silicon carbide (P-doped nc-SiCx:H) thin films on polyethylene terephthalate (PET) substrate. With the aim at obtaining highly conductive thin films, H2/Ar mixed dilution has been applied for creating plasma during deposition, and the variation of structural, electrical and optical properties with H2/Ar flow ratio RH have been systemically investigated through a series of characterizations. Results show that the highly crystallized P-doped nc-SiCx:H thin film can be prepared while the properties are controllable through adjusting RH. In the case of RH=0.75, the maximum dark conductivity (6.42 S/cm) and a wide optical bandgap (1.93 eV) are attained. Finally, detail discussion has been made to illustrate the growth mechanism of the flexible P-doped nc-SiCx:H thin films.

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Section: Resultsmentioning

confidence: 90%

Fabrication of highly conductive phosphorous-doped nc-SiCx:H thin film on PET

Liu,

Sun,

Tang

et al. 2024

Phys. Scr.

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“…1b for the sample prepared at H 2 ow = 300 sccm. There are four Gaussian-shaped sub-peaks can be divided from the spectrum: (1) a broad peak assigned to the asymmetric Si-N bond stretching mode at ~ 465 cm − 1 [21] ; (2) a broad peak of the amorphous silicon (a-Si) phase at ~ 480 cm − 1 ; (3) a narrow peak denoting the intermediate phase containing grain boundaries and Si ultra-nanocrystalline at ~ 510 cm − 1 [22][23] ; (4) a narrow Lorentz-shaped peak corresponding to the component of crystalline Si at ~ 520 cm − 1 .…”

Section: Resultsmentioning

confidence: 99%

Properties of phosphorus-boron co-doped c-Si quantum dots/SiNx:H thin film prepared by PECVD in-situ deposition

Gu,

Shan,

Jia

2024

Preprint

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Co-doping of phosphorus and boron elements into crystalline silicon quantum dot (c-Si QD) is an effective approach for enhancing the photoluminescence (PL) performance. In this paper, we report on the preparation of hydrogenated silicon nitride (SiNx:H) thin films embedded with phosphorus-boron co-doped c-Si QDs via plasma enhanced chemical vapor deposition (PECVD) route. Mixed dilution including hydrogen (H2) and argon (Ar) is applied in the in-situ deposition process for optimizing the deposition process. The P-B co-doped c-Si QD/SiNx:H thin films exhibit a wide range of PL spectra. The emission is greatly improved especially for the short-wavelength light when compared to the SiOx:H thin film containing P-B co-doped c-Si QDs. The effects of H2/Ar flow ratio on the structural and optical characteristics of thin films are systematically investigated through a series of characterizations. Experimental results show that various properties, such as crystallinity, QD size, optical band gap and doping concentrations, are effectively controlled by tuning H2/Ar flow ratio. Based on the red-shift of QCE-related PL peak, the successful P-B co-doping into Si QDs are verified. Finally, a comprehensive discussion has been made to analyze the influence of H2-Ar mixed dilution on the film growth and impurity doping in detail in this paper.

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“…We systematically studied the distribution of impurity in P or B singly doped Si NC samples and the doping-induced novelty in electronic and optical properties. [20][21][22][23] We also fabricated P/B co-doped Si NCs/SiO 2 multilayers, and it is interesting to find improved conductivity and enhanced sub-band light emission via suitable co-doping. [16,24] However, direct observation of the distribution of impurities is still lacking and the corresponding mechanism is still unclear.…”

Section: Introductionmentioning

confidence: 99%

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Han

Sun

et al. 2023

Chinese Phys. B

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Doping in Si nanocrystals is an interesting topic and to directly study the dopants distribution in phosphorous/boron co-doping circumstance is one of the important issue nowadays. In this study, atom probe tomography is performed to study the structures and impurity distribution in phosphorous/boron co-doped Si nanocrystals/SiO2 multilayers. Comparing with phosphorous singly-doped Si nanocrystals, it is interesting to find the phosphorous concentration in co-doped samples can be significantly improved. Theoretical simulation suggests that phosphorous-boron pairs are formed in co-doped Si nanocrystals with the lowest formation energy, which also reduce the formation energy of phosphorous in Si nanocrystals. The results indicate co-doping can promote more phosphorous impurities enter into the near-surface and inner sites of Si nanocrystals, which provides an interesting way to regulate the electronic and optical properties of Si nanocrystals like the observed enhancement of conductivity and sub-band light emission.

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Quantum size-dependent luminescence and nonlinear optical properties of silicon quantum dots/SiO2 multilayer

Cited by 6 publications

References 47 publications

Fabrication of highly conductive phosphorous-doped nc-SiCx:H thin film on PET

Fabrication of highly conductive phosphorous-doped nc-SiCx:H thin film on PET

Properties of phosphorus-boron co-doped c-Si quantum dots/SiNx:H thin film prepared by PECVD in-situ deposition

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

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