Quantum efficiency investigations of type-II InAs/GaSb midwave infrared superlattice photodetectors

Giard, E.; Ribet-Mohamed, I.; Jaeck, Julien; Viale, T.; Haïdar, Riad; Taalat, R.; Delmas, M.; Rodriguez, J. B.; Steveler, Émilie; Bardou, Nathalie; Boulard, F.; Christol, Philippe

doi:10.1063/1.4890309

Cited by 31 publications

(20 citation statements)

References 20 publications

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“…The material properties, i.e. electronic band structure, of the SL are ruled by the ratio R and it has already been proven that it has an influence on the electrooptical properties of midwave SL photodiodes with the same energy band gap [20] [21]. The objective of this work, therefore, is to explore and investigate the period flexibility of Ga-containing SLs for the LWIR spectral range.…”

Section: I-introductionmentioning

confidence: 99%

Flexibility of Ga-containing Type-II superlattice for long-wavelength infrared detection

Delmas¹,

Kwan²,

Debnath³

et al. 2019

J. Phys. D: Appl. Phys.

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In this paper, the flexibility of long-wavelength Type-II InAs/GaSb superlattice (Ga-containing SL) is explored and investigated from the growth to the device performance. First, several samples with different SL period composition and thickness are grown by molecular beam epitaxy. Nearly straincompensated SLs on GaSb exhibiting an energy band gap between 105 to 169 meV at 77K are obtained.Second, from electronic band structure calculation, material parameters are extracted and compared for the different grown SLs. Finally, two p-i-n device structures with different SL periods are grown and their electrical performance compared. Our investigation shows that an alternative SL design could potentially be used to improve the device performance of diffusion-limited devices for long-wavelength infrared detection.

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Section: I-introductionmentioning

confidence: 99%

Flexibility of Ga-containing Type-II superlattice for long-wavelength infrared detection

Delmas¹,

Kwan²,

Debnath³

et al. 2019

J. Phys. D: Appl. Phys.

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“…17,18 For a better understanding of the impact of the GaSb content, we have recently studied the influence of the InAs/ GaSb SL period composition and the thickness on the material and device properties. 19,20 We found that the SL period mainly composed of GaSb (hereto referred to as "GaSbrich") has a higher current density than the SL structure mainly composed of InAs ("InAs-rich") having the same cut-off wavelength of 5 lm at 77 K. The current density difference between these MWIR structures is extremely large with almost a factor of 50.…”

Section: Introductionmentioning

confidence: 81%

Identification of a limiting mechanism in GaSb-rich superlattice midwave infrared detector

Delmas

Rodriguez

Rossignol

et al. 2016

Journal of Applied Physics

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GaSb-rich superlattice (SL) p-i-n photodiodes grown by molecular beam epitaxy were studied theoretically and experimentally in order to understand the poor dark current characteristics typically obtained. This behavior, independent of the SL-grown material quality, is usually attributed to the presence of defects due to Ga-related bonds, limiting the SL carrier lifetime. By analyzing the photoresponse spectra of reverse-biased photodiodes at 80 K, we have highlighted the presence of an electric field, breaking the minibands into localized Wannier-Stark states. Besides the influence of defects in such GaSb-rich SL structures, this electric field induces a strong tunneling current at low bias which can be the main limiting mechanism explaining the high dark current density of the GaSb-rich SL diode.

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“…Fig 6 represents the QE measurement of an InAs-rich nid MWIR FPA (320x256) made in France [2]. The 42% average QE is due to the fact that this structure is double-pass and that the depletion zone is now betterr overlapping with the absorption zone, which allows more hole minority carriers to be collected.…”

Section: Icso 2016 Biarritz France International Conference On Spacementioning

confidence: 99%

“…The fact that increasing the bias voltage also improves the QE means that there is a problem of transport in the InAs-rich structure. Simulations using Hovel equations [2][3] have been performed in order to determine the minority carrier diffusion length. QE is the sum of the contributions of three zones: the quasi neutral zone N (QEn), the depletion zone (QEzce) and the quasi neutral zone P (QEp).…”

Section: A Comparisons Of Several T2sl Structure Designsmentioning

confidence: 99%

Radiometric characterization of type-II InAs/GaSb superlattice (t2sl) midwave infrared photodetectors and focal plane arrays

Nghiem

Giard

Delmas

et al. 2017

International Conference on Space Optics — ICSO 2016

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Quantum efficiency investigations of type-II InAs/GaSb midwave infrared superlattice photodetectors

Abstract: International audienc

Cited by 31 publications

References 20 publications

Flexibility of Ga-containing Type-II superlattice for long-wavelength infrared detection

Flexibility of Ga-containing Type-II superlattice for long-wavelength infrared detection

Identification of a limiting mechanism in GaSb-rich superlattice midwave infrared detector

Radiometric characterization of type-II InAs/GaSb superlattice (t2sl) midwave infrared photodetectors and focal plane arrays

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