Quantum efficiency analysis of thin-layer silicon solar cells with back surface fields and optical confinement

Brendel, Rolf; Hirsch, M.; Plieninger, R.; Werner, Jürgen

doi:10.1109/16.502422

Cited by 91 publications

(39 citation statements)

References 11 publications

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“…The constants a i and b i contain the optical information of the light absorption and can be found in Ref. 17. The important improvement is the fact that the model is valid for any diffusion length.…”

Section: Front Illuminationmentioning

confidence: 99%

Generalized models of the spectral response of the voltage for the extraction of recombination parameters in silicon devices

Mäckel

Cuevas

2005

Journal of Applied Physics

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Analytical models of the spectral response of the voltage of silicon devices have been generalized using the concept of the internal quantum efficiency of the semiconductor. This allows the extension of models used in the analysis of the internal quantum efficiency to the spectral response of the voltage. Existing models for the spectral response of the voltage that are largely employed in the surface photovoltage technique are shown to be special cases that approximate the internal quantum efficiency. A more sophisticated model of the internal quantum efficiency, the model of Isenberg, and a model that allows the analysis of the internal quantum efficiency of rear-illuminated devices have been adapted to the spectral response of the voltage. This paves the way to analyze solar cells, Schottky devices, or chemically treated silicon wafers independently of the light intensity and using front or rear illumination. The models have been validated by comparing the analysis of the spectral response of the short-circuit current and the open-circuit voltage with computer simulations for a wide range of solar cells. The model of Isenberg has been found to give in general the best prediction of the recombination parameters for both the spectral photocurrent and photovoltage. The analysis of the spectral response of the voltage can often unveil the surface recombination rate where the spectral photovoltage fails to produce any output. The measurement of rear-junction cells showed that the surface recombination rate can be predicted equally well with either method.

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Section: Front Illuminationmentioning

confidence: 99%

Generalized models of the spectral response of the voltage for the extraction of recombination parameters in silicon devices

Mäckel

Cuevas

2005

Journal of Applied Physics

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“…The correction is calculated by using an analytical model for the charge carrier generation profile adapted from Ref. 57. Within the wavelength range where data from the industrial (textured) solar cell is available, the correction is of the order of not more than 6%, which is still hardly visible on a logarithmic scale.…”

Section: -16mentioning

confidence: 99%

Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon

et al. 2015

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We analyze the uncertainty of the coefficient of band-to-band absorption of crystalline silicon. For this purpose, we determine the absorption coefficient at room temperature (295 K) in the wavelength range from 250 to 1450 nm using four different measurement methods. The data presented in this work derive from spectroscopic ellipsometry, measurements of reflectance and transmittance, spectrally resolved luminescence measurements and spectral responsivity measurements. A systematic measurement uncertainty analysis based on the Guide to the expression of uncertainty in measurement (GUM) as well as an extensive characterization of the measurement setups are carried out for all methods. We determine relative uncertainties of the absorption coefficient of 0.4% at 250 nm, 11% at 600 nm, 1.4% at 1000 nm, 12% at 1200 nm and 180% at 1450 nm. The data are consolidated by intercomparison of results obtained at different institutions and using different measurement approaches.

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“…The emission probability of luminescence photons f em equals the absorption probability of photons incident on the sample, which we calculate by employing an analytical model [13]. For this purpose, we consider a sample with perfectly passivated surfaces and a specular reflecting rear side.…”

Section: Application To Metallized Samplesmentioning

confidence: 99%

Reverse Saturation Current Density Imaging of Highly Doped Regions in Silicon Employing Photoluminescence Measurements

Müller

Bothe

Herlufsen

et al. 2012

IEEE J. Photovoltaics

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We present a camera-based technique for the local determination of reverse saturation current densities J 0 of highly doped regions in silicon wafers utilizing photoconductancecalibrated photoluminescence (PL) imaging at different illumination intensities. We apply this approach to 12.5 × 12.5 cm 2 float zone silicon (Si) samples with textured surfaces and a homogeneous phosphorous diffusion with sheet resistances between 24 and 230 Ω/ . We find enhanced PL emission at metallized regions of a sample due to reflection of long-wavelength light at the sample rear. In order to allow for a transfer of the calibration function relating the camera PL signal to the excess charge carrier density Δn, our measurement setup comprises an optical short-pass filter in front of the camera that effectively blocks wavelengths above 970 nm. Investigating samples comprising local metal contacts to the highly doped regions prepared by screen printing of silver paste, we find a significantly higher J 0 ,m eta llized = 1000 fA/cm 2 for the metalized areas compared with the nonmetallized area characterized by J 0 ,n o n m eta llized = 330 fA/cm 2 .

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Quantum efficiency analysis of thin-layer silicon solar cells with back surface fields and optical confinement

Cited by 91 publications

References 11 publications

Generalized models of the spectral response of the voltage for the extraction of recombination parameters in silicon devices

Generalized models of the spectral response of the voltage for the extraction of recombination parameters in silicon devices

Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon

Reverse Saturation Current Density Imaging of Highly Doped Regions in Silicon Employing Photoluminescence Measurements

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