Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon

Schinke, Carsten; Peest, Christian; Schmidt, Jan; Brendel, Rolf; Bothe, Karsten; Vogt, Malte R.; Kröger, Ingo; Winter, S.; Schirmacher, A.; Lim, Siew Yee; Nguyen, Hieu T.; Macdonald, Daniel

doi:10.1063/1.4923379

Cited by 381 publications

(273 citation statements)

References 44 publications

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“…In the case of silicon, absorption is very low at λ 0 = 1550 nm. The measurements by Schinke et al [45] and Green [46] for λ 0 = 1450 nm give α ≈ 10 −8 cm −1 and the absorption is known to decrease towards λ 0 = 1550 nm. Therefore, we can conservatively estimate α = 10 −8 cm −1 .…”

Section: Displacement Of Atoms Due To Optical Absorptionmentioning

confidence: 95%

Mass-polariton theory of light in dispersive media

2017

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We have recently shown that the electromagnetic pulse in a medium is made of mass-polariton (MP) quasiparticles, which are quantized coupled states of the field and an atomic mass density wave (MDW) [M. Partanen et al., Phys. Rev. A 95, 063850 (2017)]. In this work, we generalize the MP theory of light for dispersive media assuming that absorption and scattering losses are very small. Following our previous work, we present two different approaches to the coupled state of light: (1) the MP quasiparticle theory, which is derived by only using the fundamental conservation laws and the Lorentz transformation; (2) the classical optoelastic continuum dynamics (OCD), which is a generalization of the electrodynamics of continuous media to include the dynamics of the medium under the influence of optical forces. We show that the total momentum and the transferred mass of the light pulse can be determined in a straightforward way if we know the field energy of the pulse and the dispersion relation of the medium. In analogy to the nondispersive case, we also find unambiguous correspondence between the MP and OCD theories. For the coupled MP state of a single photon and the medium, we obtain the total MP momentum p MP = n ph ω/c, where n p is the phase refractive index. The field's share of the MP momentum is equal to p field =hω/(n g c), where n g is the group refractive index and the share of the MDW is equal to p MDW = p MP − p field . Thus, as in a nondispersive medium, the total momentum of the MP is equal to the Minkowski momentum and the field's share of the momentum is equal to the Abraham momentum. We also show that the correspondence between the MP and OCD models and the conservation of momentum at interfaces gives an unambiguous formula for the optical force. The dynamics of the light pulse and the related MDW lead to nonequilibrium of the medium and to relaxation of the atomic density by sound waves in the same way as for nondispersive media. We also carry out simulations for optimal measurements of atomic displacements related to the MDW in silicon. In the simulations, we consider different waveguide cross sections and optical pulse widths and account for the breakdown threshold irradiance of materials. We also compare the MP theory to previous theories of the momentum of light in a dispersive medium. We show that our generalized MP theory resolves all the problems related to the Abraham-Minkowski dilemma in a dispersive medium.

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Section: Displacement Of Atoms Due To Optical Absorptionmentioning

confidence: 95%

Mass-polariton theory of light in dispersive media

2017

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“…The backsheet is not included in the model since the Al layer is optically opaque over the wavelengths of the simulation. In the MRT simulation, spectroscopic optical properties from literature for glass, ultraviolet absorbing EVA, Si, and Al are used. Optical properties of plasma‐enhanced chemical vapor deposition (PECVD) grown SiN x have been characterized by same procedure as for low pressure chemical vapor deposition (LPCVD) SiN x as in Ref.…”

Section: Resultsmentioning

confidence: 99%

Al+Si Interface Optical Properties Obtained in the Si Solar Cell Configuration

Subedi

Silverman

Deceglie

et al. 2017

Physica Status Solidi (a)

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Al is a commonly used material for rear side metallization in commercial silicon (Si) wafer solar cells. In this study, through‐the‐silicon spectroscopic ellipsometry is used in a test sample to measure Al+Si interface optical properties like those in Si wafer solar cells. Two different spectroscopic ellipsometers are used for measurement of Al+Si interface optical properties over the 1128–2500 nm wavelength range. For validation, the measured interface optical properties are used in a ray tracing simulation over the 300–2500 nm wavelength range for an encapsulated Si solar cell having random pyramidal texture. The ray tracing model matches well with the measured total reflectance at normal incidence of a commercially available Si module. The Al+Si optical properties presented here enable quantitative assessment of major irradiance/current flux losses arising from reflection and parasitic absorption in encapsulated Si solar cells.

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“…In order to account for free carrier absorption (FCA) in the rear-surface n + and p + regions in the simulations, the doping profiles of the regions were determined using electrochemical capacitance voltage measurements and the model of Baker-Finch et al [24] was used to calculate the FCA of both regions for each wavelength. The contribution of FCA was then accounted for in the simulations by including a 500 nm layer on the solar cell rear surface with the refractive index of Si (obtained from Schinke et al [25]) and a wavelength-dependent extinction coefficient that resulted in the same calculated FCA.…”

Section: Optical Simulationsmentioning

confidence: 99%

Metallization Method for Interdigitated Back-Contact Silicon Solar Cells Employing an Insulating Resin Layer and a Ti/Ag/Cu Metal Stack

Song

Römer

Gentle

et al. 2018

IEEE J. Photovoltaics

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Interdigitated back-contact (IBC) silicon (Si) solar cells are attracting increased attention due to the potential of higher efficiency that comes from eliminating front-surface shading. However, as sources of recombination loss continue to be reduced due to improved processing and use of high-quality n-type wafers, parasitic absorption in the rear metal can limit cell performance. This paper reports experimental and simulation results that identify the optical advantages of an IBC metallization method, which employs a novolac resin layer to enhance the insulation of the cell from a metal electrode comprising a sputtered Ti/Ag metal stack and plated Cu. The polymer layer can electrically decouple the metal geometry from the doping geometry and also helps to reduce the parasitic absorption at the cell rear surface by increasing the distance between the metal and Si absorber. The optical properties of the Ti/Ag stacks formed over the novolac resin were comparable to those with an Ag reflector; however, the Ti/Ag reflector offered the additional benefit of contact resistivity of < 1 mΩ·cm 2 to both the n + and p + Si regions of the diffused IBC cells.

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Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon

Cited by 381 publications

References 44 publications

Mass-polariton theory of light in dispersive media

Mass-polariton theory of light in dispersive media

Al+Si Interface Optical Properties Obtained in the Si Solar Cell Configuration

Metallization Method for Interdigitated Back-Contact Silicon Solar Cells Employing an Insulating Resin Layer and a Ti/Ag/Cu Metal Stack

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