Quantum corrections to conductivity in graphene with vacancies

Araújo, Eduardo Nery Duarte de; Brant, J. C.; Archanjo, Bráulio S.; Medeiros‐Ribeiro, G.; Alves, Endrigo Gabellini Leonel

doi:10.1016/j.physe.2018.02.025

Cited by 8 publications

(7 citation statements)

References 23 publications

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“…After cobalt deposition the line slope increases for τ * (from p ≈ 0.38 to p ≈ 0.77) and decreases for τ i (from p ≈ 0.42 to p ≈ 0.29). This behavior agrees with earlier results for single-layer graphene [42].…”

Section: Resultssupporting

confidence: 93%

Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD graphene

Fedotov¹,

Прищепа²,

Fedotov³

et al. 2019

MoEM

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Graphene applications in electronics require experimental study of the formation of high-quality Ohmic contacts and deeper understanding of electron transport mechanisms at metal/grapheme contacts. We have studied carrier transport in twisted CVD graphene decorated with electrodeposited Co particles forming Ohmic contacts with graphene layers. We have compared layer resistivity as a function of temperature and magnetic field R�(T, B) for as-synthesized and decorated twisted graphene on silicon oxide substrates. Experiments have proven the existence of negative (induction < 1 Tl) and positive (induction > 1 Tl) contributions to magnetoresistance in both specimen types. The R�(T, B) functions have been analyzed based on the theory of 2D quantum interference corrections to Drude conductivity taking into account competition of hopping conductivity mechanism. We show that for the experimental temperature range (2–300 K) and magnetic field range (up to 8 Tl), carrier transport description in test graphene requires taking into account at least three interference contributions to conductivity, i.e., from weak localization, intervalley scattering and pseudospin chirality, as well as graphene buckling induced by thermal fluctuations.

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Section: Resultssupporting

confidence: 93%

Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD graphene

Fedotov¹,

Прищепа²,

Fedotov³

et al. 2019

MoEM

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“…However, random porosities are an inevitable and significant issue in research and applications of graphene. On the one hand, the atomic [ 12 , 13 , 14 ] and bond [ 15 , 16 ] vacancy defects appear in the production process of graphene [ 17 , 18 , 19 ]. The effects of random porosities in graphene are important problems that must be confronted.…”

Section: Introductionmentioning

confidence: 99%

The Effects of Random Porosities in Resonant Frequencies of Graphene Based on the Monte Carlo Stochastic Finite Element Model

Chu

Shi

et al. 2021

IJMS

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With the distinguished properties in electronics, thermal conductivity, optical transparence and mechanics, graphene has a powerful potential in nanosensors, nano-resonators, supercapacitors, batteries, etc. The resonant frequency of graphene is an important factor in its application and working environment. However, the random dispersed porosities in graphene evidently change the lattice structure and destroy the integrity and geometrical periodicity. This paper focuses on the effects of random porosities in resonant frequencies of graphene. Monte Carlo simulation is applied to propagate the porosities in the finite element model of pristine graphene. The statistical results and probability density distribution of porous graphene with atomic vacancy defects are computed based on the Monte Carlo finite element model. The results of porous graphene with atomic vacancy defects are compared and discussed with the results of graphene with bond vacancy defects. The enhancement effects of atomic vacancy defects are confirmed in porous graphene. The influences of atomic vacancy defects on displacement and rotation vector sums of porous graphene are more concentrated in local places.

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“…The authors described a hopping carrier transport model to explain the effect and pointed out that the observed behavior essentially places a limit on the spatial resolution attainable when using the helium ion beam to selectively dose and thus change the conductivity of nanoscale regions. Several other studies of selective helium ion-induced conductivity changes in graphene have also been conducted [ 23 ] and a theoretical treatment of defect-induced conductivity changes upon helium ion irradiation of free-standing compared to supported monolayer graphene can be found in [ 24 ].…”

Section: Reviewmentioning

confidence: 99%

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

Allen¹

2021

Beilstein J. Nanotechnol.

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The helium ion microscope has emerged as a multifaceted instrument enabling a broad range of applications beyond imaging in which the finely focused helium ion beam is used for a variety of defect engineering, ion implantation, and nanofabrication tasks. Operation of the ion source with neon has extended the reach of this technology even further. This paper reviews the materials modification research that has been enabled by the helium ion microscope since its commercialization in 2007, ranging from fundamental studies of beam–sample effects, to the prototyping of new devices with features in the sub-10 nm domain.

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Quantum corrections to conductivity in graphene with vacancies

Cited by 8 publications

References 23 publications

Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD graphene

Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD graphene

The Effects of Random Porosities in Resonant Frequencies of Graphene Based on the Monte Carlo Stochastic Finite Element Model

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

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