Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD graphene

Abstract

Graphene applications in electronics require experimental study of the formation of high-quality Ohmic contacts and deeper understanding of electron transport mechanisms at metal/grapheme contacts. We have studied carrier transport in twisted CVD graphene decorated with electrodeposited Co particles forming Ohmic contacts with graphene layers. We have compared layer resistivity as a function of temperature and magnetic field R�(T, B) for as-synthesized and decorated twisted graphene on silicon oxide substrates. Experiments have proven the existence of negative (induction < 1 Tl) and positive (induction > 1 Tl) contributions to magnetoresistance in both specimen types. The R�(T, B) functions have been analyzed based on the theory of 2D quantum interference corrections to Drude conductivity taking into account competition of hopping conductivity mechanism. We show that for the experimental temperature range (2–300 K) and magnetic field range (up to 8 Tl), carrier transport description in test graphene requires taking into account at least three interference contributions to conductivity, i.e., from weak localization, intervalley scattering and pseudospin chirality, as well as graphene buckling induced by thermal fluctuations.

Influence of irradiation by Swift Heavy Ions (SHI) on electronic magnetotransport in Sb δ-layer in silicon

“…( 1) was carried out with the only two adjustable parameters 𝐵 𝑖 and 𝐵 𝑒𝑒 in the temperature range of 2-25 K and at magnetic fields lower than 1 𝑇 where NMR was prevailed. The algorithm for the estimation of diffusion coefficients 𝐷 𝑑𝑖𝑓 𝑓 for drifting electrons in (3), based on the experimental values of conductivity, uses the approach of the work [26] and was described in our paper [27].…”