Quantum confinement effects in Si/Ge heterostructures with spatially ordered arrays of self-assembled quantum dots

Dais, Christian; Grützmacher, Detlev; Haug, Rolf J.

doi:10.1063/1.3442508

Cited by 8 publications

(6 citation statements)

References 21 publications

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“…To manufacture double‐barrier resonant tunneling diodes, laterally ordered arrays of Ge dots on pit‐patterned substrates were incorporated into the intrinsic zone of a p + ‐i‐p + ‐diode structure. Here, step‐like structures in the I – V characteristics with corresponding sharp and peak‐like d I /d V structures were demonstrated 66. For a strained thin film channel MOSFETs with a backside MOS‐gate, one single Ge dot of a laterally ordered dot array was used to introduce mechanical strain into the overlaying thin film MOSFET channel to increase the channel carrier mobility.…”

Section: Device Applicationsmentioning

confidence: 95%

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Recent developments in Ge dots grown on pit‐patterned surfaces

Karmous

Fischer

Kirfel

et al. 2012

Physica Status Solidi (b)

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Carrier confinement in Ge dots in a Si matrix has a large influence on electronic and optical properties. These dots, therefore, continue to be of interest for potential device applications. For this, the control over dot geometry, position, composition, and strain is a necessary prerequisite. Ge dots that are deposited on substrates with previously defined nucleation sites, as obtained by a patterning of the substrate, have been at the focus of a number of experimental investigations these last years, precisely because they seem to be suited for incorporation into electronic and optical devices. We review recent results in this research area that are e.g., concerned with analysing the influence of the available patterning and growth parameters on the dots and give an overview of recent developments in device applications.

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Section: Device Applicationsmentioning

confidence: 95%

“…So far, laterally ordered arrays of Ge dots have been incorporated into several electronic device concepts: double‐barrier resonant tunneling diodes 66, strained thin film channel metal‐oxid‐semiconductor field‐effect transistors (MOSFETs) 67, and Ge dot memory structures 20.…”

Section: Device Applicationsmentioning

confidence: 99%

Recent developments in Ge dots grown on pit‐patterned surfaces

Karmous

Fischer

Kirfel

et al. 2012

Physica Status Solidi (b)

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“…An important challenge of advanced silicon-based sensors is adjusting the band range of light absorption to expand the flexibility in detection. The quantum confinement of light excitation carriers can widen the energy band inside SiNWs and improve the transition probability of stimulated radiation of the electrons [ 4 , 5 ]. Therefore, the energy band structure of nanomaterials shows the obvious size dependence.…”

Section: Introductionmentioning

confidence: 99%

Effect of Surface Morphology Changes on Optical Properties of Silicon Nanowire Arrays

Wang

Huang

Zhao

2022

Sensors

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The optical properties of silicon nanowire arrays (SiNWs) are closely related to surface morphology due to quantum effects and quantum confinement effects of the existing semiconductor nanocrystal. In order to explore the influence of the diameters and distribution density of nanowires on the light absorption in the visible to near infrared band, we report the highly efficient method of multiple replication of versatile homogeneous Au films from porous anodic aluminum oxide (AAO) membranes by ion sputtering as etching catalysts; the monocrystalline silicon is etched along the growth templates in a fixed proportion chemical solution to form homogeneous ordered arrays of different morphology and distributions on the surface. In this system, we demonstrate that the synthesized nanostructure arrays can be tuned to exhibit different optical characteristics in the test wavelength range by adjusting the structural parameters of AAO membranes.

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“…The influence of quantum confinement effect on the band structure of semiconductor cannot be neglected, especially for tuning of the band gap (Huang et al, 2020;Mu et al, 2018;Agafonov et al, 2010). It is well known that the band gap is caused by quantum confinement effect due to the size.…”

Section: Introductionmentioning

confidence: 99%

Band structural and absorption characteristics of antimonene/bismuthene monolayer heterojunction calculated by first-principles

et al. 2022

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The band gap of lateral heterojunctions (LHSs) can be continuously tuned by changing the widths of their components. In this work, Sb/Bi LHSs based on monolayer Sb and Bi atoms with armchair and zigzag interfaces are constructed, respectively. It exhibits an atom’s number in planner-dependent tunable band gap and near-infrared range absorption characteristics. They are systematically studied by first-principles calculations. The widths are represented by the number (n) of Sb or Bi atom chains. When n increases from 2 to 8, the bandgaps of armchair Sbn/Bin LHSs decrease from 0.89 to 0.67 eV, and the band gaps of zigzag Sbn/Bin LHSs decrease from 0.92 to 0.76 eV. The partial density of states spectra indicate that the occupied states of the valence band are mainly provided by the Bi 6p orbitals. Additionally, the unoccupied states of the conduction band are always provided by the Sb 5p orbitals and Bi 6p orbitals. For Sbn/Bin LHSs, the absorption edge along XX and YY directions move toward the long wavelength direction. These results provide an approach for the applications of two-dimensional materials in near-infrared devices.

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Quantum confinement effects in Si/Ge heterostructures with spatially ordered arrays of self-assembled quantum dots

Cited by 8 publications

References 21 publications

Recent developments in Ge dots grown on pit‐patterned surfaces

Recent developments in Ge dots grown on pit‐patterned surfaces

Effect of Surface Morphology Changes on Optical Properties of Silicon Nanowire Arrays

Band structural and absorption characteristics of antimonene/bismuthene monolayer heterojunction calculated by first-principles

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