Quantum-confined Stark effects in the m-plane In0.15Ga0.85N∕GaN multiple quantum well blue light-emitting diode fabricated on low defect density freestanding GaN substrate

Onuma, Takeyoshi; Amaike, H.; Kubota, Masashi; Okamoto, Kuniyoshi; Ohta, Hiromichi; Ichihara, Jun; Takasu, H.; Chichibu, S. F.

doi:10.1063/1.2802042

Cited by 50 publications

(30 citation statements)

References 20 publications

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“…This is expected to improve the emission wavelength stability and the efficiency. 8 The exploration of GaN nanorod growth started from late 1990s. Pioneering research on GaN nanorod growth was focusing on the self-organized growth of GaN nanorods by molecular beam epitaxy (MBE).…”

Section: Introductionmentioning

confidence: 99%

GaN based nanorods for solid state lighting

Li¹,

Waag

2012

Journal of Applied Physics

492

394

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In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

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Section: Introductionmentioning

confidence: 99%

GaN based nanorods for solid state lighting

Li¹,

Waag

2012

Journal of Applied Physics

492

394

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“…Also, the polarization field which limits the oscillation strength in the (0001) InGaN/GaN QWs is absent in the non-polar (1-100) and (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) sidewalls. This is expected to improve the emission wavelength stability and the efficiency [5]. Typically, current white light emission is obtained by coating blue/violet light emitting diodes (LEDs) with a yellow phosphor converter.…”

Section: Introductionmentioning

confidence: 99%

GaN and LED structures grown on pre‐patterned silicon pillar arrays

Fündling

Sökmen

et al. 2010

Phys. Status Solidi (c)

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GaN nanorods (or nanowires) have attracted great interest in a variety of applications, e.g. high‐efficiency light emitting diodes, monolithic white light emission and optical interconnection due to their superior properties. In contrast to the mostly investigated self‐assembled growth of GaN nanorods, we performed GaN nanorod growth by pre‐patterning of the Si substrates. The pattern was transferred to Si substrates by photolithography and cryo‐temperature inductively‐coupled plasma etching. These Si templates then were used for further GaN nanorod growth by metal‐organic vapour phase epitaxy (MOVPE). The low temperature AlN nucleation layer had to be optimized since it differs from its 2D layer counterpart on the surface area and orientations. We found a strong influence of diffusion processes, i.e. the GaN grown on top of the Si nanopillars can deplete the GaN around the Si pillars. Transmission electron microscopy measurements demonstrated clearly that the threading dislocations bend to the side facets of the pyramidal GaN nanostructures and terminate. Cathodoluminescence measurements reveal a difference of In composition and/or thickness of InGaN quantum wells on the different facets of the pyramidal GaN nanostructures. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…1 Introduction Driven by the progress in epitaxial growth techniques, non-polar nitride based QWs have now been successfully incorporated into light emitting diodes (LEDs) and lasers [1,2]. However, in addition to the benefits of reduced internal electric fields, these devices are also expected to be useful in that they will exhibit significant optical anisotropy.…”

mentioning

confidence: 99%

Characterising the degree of polarisation anisotropy in an a ‐plane GaN film

Badcock

Schulz²,

Moram

et al. 2010

Phys. Status Solidi (c)

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We have performed a thorough characterisation of an a ‐plane GaN film, using X‐ray diffraction reciprocal space mapping, k·p theory and polarised photoluminescence spectroscopy Within the plane of the film and along the growth direction, the strain was found to be compressive and tensile respectively. The relative oscillator strength of the transitions involving the topmost valence bands has been calculated as a function of strain. We find that using the experimentally determined strain values as input parameters to the theoretical model, results in good agreement between the predicted relative oscillator strengths and the degree of optical polarisation anisotropy measured in the low temperature photoluminescence spectroscopy. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Quantum-confined Stark effects in the m-plane In0.15Ga0.85N∕GaN multiple quantum well blue light-emitting diode fabricated on low defect density freestanding GaN substrate

Cited by 50 publications

References 20 publications

GaN based nanorods for solid state lighting

GaN based nanorods for solid state lighting

GaN and LED structures grown on pre‐patterned silicon pillar arrays

Characterising the degree of polarisation anisotropy in an a ‐plane GaN film

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