Quantitative TOF-SIMS analysis of metal contamination on silicon wafers

Zanderigo, F.; Ferrari, Sara; Queirolo, G.; Pello, C.; Borgini, M

doi:10.1016/s0921-5107(99)00456-0

Cited by 26 publications

(13 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…TOF‐SIMS is a technique based on mass spectrometry and is therefore said not to be a quantitative technique. However, in spite of TOF‐SIMS not being a quantitative technique in principle, many workers have made extensive efforts to find ways to use TOF‐SIMS quantitatively 12–62. Whether or not TOF‐SIMS can be said to be quantitative is still debated.…”

Section: Introductionmentioning

confidence: 99%

Quantification of grafted poly(ethylene glycol)‐silanes on silicon by time‐of‐flight secondary ion mass spectrometry

et al. 2002

View full text Add to dashboard Cite

Silicon grafted monodisperse poly(ethylene glycol) (PEG) silanes with various PEG chain lengths and mixtures of these were systematically analyzed with static time-of-flight secondary ion mass spectrometry (TOF-SIMS). The mass spectra show differences in the various relative signal intensities, an observation that was used to elucidate important aspects of the grafting process. The relationship between PEG-silane fragment ion abundances and Si(+) ion abundances were used to (i) qualitatively describe layer thicknesses of grafted mixtures of PEG-silanes on silicon, (ii) construct a calibration curve from which PEG chain length (or molecular mass) can be determined and (iii) quantitatively determine surface mixture compositions of grafted monodisperse PEG-silanes of different chain lengths (3, 7 and 11 PEG units). The results suggest that discrimination does take place in the adsorption process. The PEG-silane with the shorter PEG chain is discriminated for mixtures containing PEG3-silane, whereas the PEG-silane with the longer PEG chain is discriminated in PEG7/PEG11-silane mixtures. The origin of this difference in adsorption behavior is not well understood. Aspects of the grafting process and the TOF-SIMS analyses are discussed.

show abstract

Section: Introductionmentioning

confidence: 99%

Quantification of grafted poly(ethylene glycol)‐silanes on silicon by time‐of‐flight secondary ion mass spectrometry

et al. 2002

View full text Add to dashboard Cite

show abstract

“…With respect to the usual protocol (12), in the present case the measurement conditions are rather atypical, as we got the surface analysis after SiO 2 removal by means of Ar sputter gun. So the surface condition was changed by the presence of Argon and by the bombardment itself.…”

Section: Tof-sims Resultsmentioning

confidence: 97%

Revealing Copper Contamination in Silicon after Low Temperature Treatments

Polignano¹,

Brivio²,

Codegoni³

et al. 2009

ECS Trans.

View full text Add to dashboard Cite

In this paper we address the problem of revealing copper contamination induced in the device region by the final part of the process. A method to reveal the effects of copper contamination is identified based on the recovery of MOS capacitors from deep depletion. In the presence of copper contamination carrier generation is dominated by surface generation, which is not surprising because copper is known to be prone to surface segregation. Copper segregation at the wafer surface was also confirmed by TOF-SIMS measurements. The measurements of surface generation velocity are non-destructive and the required structures can be easily integrated in device wafers. However, a recovery of the copper-related surface generation velocity with the time spent after the thermal treatment was observed. For this reason, it is important that the measurements are carried out in a short time after the thermal treatment responsible for copper segregation at the wafer surface.

show abstract

“…Figure reports the ToF‐SIMS spectrum taken at the oxide–silicon interface, and shows that copper was revealed by these measurements. With respect to the usual protocol , in the present case the measurement conditions are rather atypical, as we obtained the surface analysis after SiO 2 removal by Ar sputtering. Therefore, the surface condition is quite different with respect to the usual “unperturbed” silicon surface, and this fact may affect the results because of matrix effects.…”

Section: Metal Contaminationmentioning

confidence: 99%

A comparative analysis of different measurement techniques to monitor metal and organic contamination in silicon device processing

Polignano

Codegoni

Grasso

et al. 2015

Phys. Status Solidi A

View full text Add to dashboard Cite

A few key techniques for the analysis of contamination in silicon are compared for their ability to detect different impurities. Both metal and organic contamination is included in this study. In addition, common contaminants and elements recently introduced in the fabrication process are considered. For what concerns metal contamination, it is shown that different approaches are required depending on the in‐depth distribution of the contaminant and hence on its diffusivity. Copper, iron, molybdenum, and tellurium are chosen as examples of contaminants with different diffusivity and solubility properties. Total reflection X‐ray fluorescence (TXRF), recombination and generation lifetime measurement techniques, deep level transient spectroscopy (DLTS) and capacitance versus voltage measurements are compared. The detection of slow diffusers is found to be very critical, because a very low dose may result in a non‐negligible concentration in the device region. As a consequence, the sensitivity per unit area required for these elements is difficult to reach with surface techniques such as TXRF. On the other hand, very fast diffusers such as copper can hardly be revealed in the solid solution in silicon. Copper in silicon can be revealed at the oxide–silicon interface by TOF‐SIMS measurements, or by surface generation velocity measurements with the Zerbst method. For what concerns organic contamination, surface recombination velocity and gate oxide integrity tests were compared. The most relevant effects of organic contamination were observed by electrical stress of the oxide. Indeed, the fraction of capacitors with degraded breakdown voltage increased dramatically in wafers with intentional organic contamination.

show abstract

Quantitative TOF-SIMS analysis of metal contamination on silicon wafers

Cited by 26 publications

References 1 publication

Quantification of grafted poly(ethylene glycol)‐silanes on silicon by time‐of‐flight secondary ion mass spectrometry

Quantification of grafted poly(ethylene glycol)‐silanes on silicon by time‐of‐flight secondary ion mass spectrometry

Revealing Copper Contamination in Silicon after Low Temperature Treatments

A comparative analysis of different measurement techniques to monitor metal and organic contamination in silicon device processing

Contact Info

Product

Resources

About