Quantitative study of epitaxial CVD diamond deposits: Correlations between nucleation parameters and experimental conditions

Guise, A.; Barrat, S.; Bauer‐Grosse, E.

doi:10.1016/j.diamond.2006.12.023

Cited by 3 publications

(1 citation statement)

References 36 publications

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“…The curve reveals a maximum value of 5 × 10 8 cm −2 at 100 V instead of around 10 5 cm −2 in the other cases. Such behaviour of the density curve is in agreement with previous studies 20–22. Gerber et al 21 link this evolution to the variation of the kinetic energy of ions that they measure by retarding field probe.…”

Section: Resultssupporting

confidence: 91%

Sequential analysis of diamond nucleation on silicon (001) with bias enhanced nucleation using X‐ray photoelectron spectroscopy and reflection high energy electron diffraction investigations

Sarrieu

Barth

Guise

et al. 2009

Physica Status Solidi (a)

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Phone: +33 (0) 3 83 58 40 94, Fax: +33 (0) 3 83 53 47 64Diamond synthesis by microwave plasma assisted chemical vapour deposition (MPCVD) with a bias enhanced nucleation (BEN) step constitutes the most efficient method to obtain heteroepitaxy and is also useful to reach high nucleation densities. In this study, sequential reflection highenergy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS) investigations enabled us to highlight the formation of amorphous carbon and crystalline silicon carbide on the surface before diamond growth. By varying the bias voltage, we underlined an optimized value corresponding to a higher quantity of amorphous carbon. This quantity is strongly correlated to the diamond nucleation density. As for the quality of the SiC texture, this seems to be directly linked to bias voltage too: low bias voltages enable us to obtain high oriented 3C-SiC whereas high bias voltages lead to a completely misoriented polycrystalline SiC film.

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Section: Resultssupporting

confidence: 91%

Sequential analysis of diamond nucleation on silicon (001) with bias enhanced nucleation using X‐ray photoelectron spectroscopy and reflection high energy electron diffraction investigations

Sarrieu

Barth

Guise

et al. 2009

Physica Status Solidi (a)

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Influence of silicon carbide interlayer evolution on diamond heteroepitaxy during bias enhanced nucleation on silicon substrates

Sarrieu

Bauer‐Grosse

Barrat

2011

Diamond and Related Materials

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Diamond Nucleation and Seeding Techniques: Two Complementary Strategies for the Growth of Ultra-thin Diamond Films

Arnault

Girard

2014

Nanodiamond

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The controlled growth of ultra-thin diamond layers on a diversity of substrates is a major challenge for many technological applications (heat spreaders, electromechanical systems, etc.). This explains the huge effort produced during the last two decades to master the early stages of diamond formation. Two main pathways have been investigated in the literature. The nucleation pathway aims to produce diamond nuclei, i.e., the smallest thermodynamically stable diamond islands, at the substrate surface. This is mainly performed by in situ treatments preceding diamond chemical vapor deposition (CVD) growth, such as bias enhanced nucleation (BEN). The second approach consists of skipping the nucleation stage by covering, ex situ, the substrate with diamond nanoparticles, which act as seeds for diamond CVD growth. The present chapter is a review of these pathways. Their respective benefits and drawbacks are discussed. Finally, these two approaches appear very complementary. Seeding allows the growth of ultra-thin diamond layers on large non-conductive substrates with micrometric patterns. On the other hand, the BEN in situ nucleation treatment remains the favored technique to achieve well-adherent diamond films and diamond heteroepitaxy.

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Quantitative study of epitaxial CVD diamond deposits: Correlations between nucleation parameters and experimental conditions

Cited by 3 publications

References 36 publications

Sequential analysis of diamond nucleation on silicon (001) with bias enhanced nucleation using X‐ray photoelectron spectroscopy and reflection high energy electron diffraction investigations

Sequential analysis of diamond nucleation on silicon (001) with bias enhanced nucleation using X‐ray photoelectron spectroscopy and reflection high energy electron diffraction investigations

Influence of silicon carbide interlayer evolution on diamond heteroepitaxy during bias enhanced nucleation on silicon substrates

Diamond Nucleation and Seeding Techniques: Two Complementary Strategies for the Growth of Ultra-thin Diamond Films

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